SP8M3 Rohm, SP8M3 Datasheet

no-image

SP8M3

Manufacturer Part Number
SP8M3
Description
SP8M3Switching
Manufacturer
Rohm
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
HK Newchip Electronic CO.,Limited HK Newchip Electronic CO.,Limited
Part Number:
SP8M3FQ1TB1
Manufacturer:
Quantity:
0
Price:
Transistors
Switching
SP8M3
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Power switching, DC / DC converter.
∗MOUNTED ON A CERAMIC BOARD.
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Features
Application
Absolute maximum ratings (Ta=25°C)
Thermal resistance (Ta=25°C)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
SP
D
S
D
Rth (ch-a)
Symbol
Nchannel
±5.0
±20
1.6
30
20
20
−55 to +150
Limits
150
2
Limits
62.5
Pchannel
±4.5
−1.6
−30
−20
±18
−18
External dimensions (Unit : mm)
SOP8
Unit
°C / W
°C
°C
W
V
V
A
A
A
A
Unit
∗1
∗1
∗2
∗A protection diode is included between the gate and
∗2
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
(8)
(1)
1.27
5.0±0.2
∗1
(7)
(2)
0.1
Each lead has same dimensions
0.4±0.1
∗2
(6)
(3)
Rev.A
∗1
0.2±0.1
(5)
(4)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
(1) (2) (3) (4)
(8) (7) (6) (5)
SP8M3
1/5

Related parts for SP8M3

SP8M3 Summary of contents

Page 1

... A ∗ °C 150 −55 to +150 °C ∗A protection diode is included between the gate and Limits Unit ∗ ° 62.5 SP8M3 5.0±0.2 0.2±0.1 0.4±0.1 1.27 0.1 Each lead has same dimensions Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate ∗ ...

Page 2

... V 15V DD − − =5V 1 − − =5.0A 1 Min. Typ. Max. Unit − − =6.4A SP8M3 Conditions =0V DS =0V GS =0V GS =1mA D ∗ =10V GS ∗ =4.5V GS ∗ =4V GS ∗ =10V DS ∗ 15V DD ∗ ∗ ∗ ∗ ∗ ∗ Conditions ∗ ...

Page 3

... V DD − − = −5V 2 − − = −4.5A 3 Min. Typ. Max. Unit − − −1.2 = −1.6A SP8M3 Conditions =0V DS = −1mA D ∗ = −10V GS ∗ = −4.5V GS ∗ = −4.0V GS ∗ = −10V DS ∗ −15V DD ∗ ∗ ∗ ∗ ∗ ...

Page 4

... On-State Resistance vs. Gate-Source Voltage 1000 V GS Ta=125°C Pulsed Ta=75°C Ta=25°C Ta= −25°C 100 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) SP8M3 10 Ta=25°C =15V =15V =5A =10V =10Ω =10Ω Pulsed ...

Page 5

... On-State Resistance vs. Gate-Source Voltage 1000 V GS Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 10 0.1 1 DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) SP8M3 8 = −15V 7 = −10V TOTAL GATE CHARGE : Qg (nC) Fig ...

Page 6

... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...

Page 7

WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com ...

Related keywords