IXFN24N100_08 IXYS Corporation, IXFN24N100_08 Datasheet
IXFN24N100_08
Manufacturer Part Number
IXFN24N100_08
Description
Manufacturer
IXYS Corporation
Datasheet
1.IXFN24N100_08.pdf
(4 pages)
HiPerFET
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
V
M
Weight
GSS
DSS
D25
DM
A
J
JM
stg
L
GS(th)
DSS
DGR
GSS
GSM
AS
D
ISOL
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
V
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
Power
, I
D
DD
D
D
= 3mA
= 8mA
= 12A, Note 1
≤ V
DS
= 0V
DSS
, T
J
GS
≤ 150°C
= 1MΩ
T
J
= 125°C
t = 1s
t = 1min
JM
IXFN24N100
1000
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
Typ.
1.5/13
1000
1000
2500
3000
± 30
±20
568
150
300
24
96
24
30
3
5
Max.
±200
100
390
5.5
Nm/lb.in.
Nm/lb.in.
2
V/ns
mA
mΩ
μA
nA
V~
V~
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
J
V
I
R
t
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
•
•
•
Applications
•
•
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B
D25
rr
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Avalanche rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
DS (on)
= 24A
= 1000V
≤ ≤ ≤ ≤ ≤ 390mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250ns
HDMOS
G
D = Drain
S
TM
DS98597H(10/08)
process
D
S
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IXFN24N100_08 Summary of contents
Page 1
... GSS DSS DS DSS 10V 12A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFN24N100 Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ± ≤ 150° 568 -55 ... +150 150 -55 ... +150 300 t = 1min ...
Page 2
Symbol Test Conditions (T = 25°C, unless otherwise specified 10V 12A, Note iss 0V 25V 1MHz oss rss t ...
Page 3
... V - Volts DS Fig Normalized to I DS(on) vs. Drain Current 2 10V 2.4 GS 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 Amperes D © 2008 IXYS CORPORATION, All rights reserved 10V 2 10V GS 2.6 2.4 2.2 6V 2.0 1.8 1.6 1.4 1.2 1.0 5V 0.8 0.6 0 ...
Page 4
Fig. 7. Input Admittance 3.5 4.0 4.5 5 Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º ...