QM150DY-HBK MITSUBISHI, QM150DY-HBK Datasheet
QM150DY-HBK
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QM150DY-HBK Summary of contents
Page 1
... OUTLINE DRAWING & CIRCUIT DIAGRAM 94 18 4– 5 C2E1 80± 0.25 (12) (12) (12) 3–M5 LABEL MITSUBISHI TRANSISTOR MODULES QM150DY-HBK HIGH POWER SWITCHING USE • I Collector current ........................ 150A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 17.5 1.3 9.5 20 ...
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... CE V =300V, I =150A, I =0.3A, I =–3. Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM150DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 7 150 150 690 9 1500 –40~+150 –40~+125 2500 1 ...
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... I =200A =25° =125° (A) B MITSUBISHI TRANSISTOR MODULES QM150DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125° ...
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... VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0.8 COLLECTOR-EMITTER REVERSE VOLTAGE QM150DY-HBK INSULATED TYPE T =125° =– =–10A B2 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° ...
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... REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL – FORWARD CURRENT QM150DY-HBK INSULATED TYPE =300V CC T =25°C I =300mA =125°C I =– –1 ...