QM100DY-HBK MITSUBISHI, QM100DY-HBK Datasheet
QM100DY-HBK
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QM100DY-HBK Summary of contents
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... OUTLINE DRAWING & CIRCUIT DIAGRAM 94 18 4– 5 C2E1 80± 0.25 (12) (12) (12) 3–M5 LABEL MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE • I Collector current ........................ 100A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 17.5 1.3 9.5 20 ...
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... CE V =300V, I =100A, I =0.2A, –I =2. Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 7 100 100 620 6 1000 –40~+150 –40~+125 2500 1 ...
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... =150A C I =100A – (A) B MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125°C ...
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... CHARACTERISTICS) (TYPICAL =25° =125° 0 COLLECTOR-EMITTER REVERSE VOLTAGE QM100DY-HBK INSULATED TYPE I =–2.0A B2 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( C) C 0.8 1.2 1.6 2.0 –V (V) CEO Feb.1999 ...
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... T =25° =125° – FORWARD CURRENT QM100DY-HBK INSULATED TYPE – (A) F Feb.1999 ...