QM100DY-2HBK MITSUBISHI, QM100DY-2HBK Datasheet
QM100DY-2HBK
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QM100DY-2HBK Summary of contents
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... C2E1 15 3–M6 LABEL MITSUBISHI TRANSISTOR MODULES QM100DY-2HBK HIGH POWER SWITCHING USE • I Collector current ........................ 100A C • V Collector-emitter voltage ......... 1000V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 B2X ...
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... CE V =600V, I =100A, I =0.2A, –I = Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE Ratings 1200 1200 1200 7 100 100 800 5 1000 –40~+150 –40~+125 2500 1 ...
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... – (A) B MITSUBISHI TRANSISTOR MODULES QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) T =25° =10V CE T =125° =4. ...
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... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL =25° =125° 0.4 0.8 COLLECTOR-EMITTER REVERSE VOLTAGE –V QM100DY-2HBK INSULATED TYPE 600 800 1000 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( C) C 1.2 1.6 2.0 (V) CEO Feb.1999 ...
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... T =125° FORWARD CURRENT QM100DY-2HBK INSULATED TYPE – (A) F Feb.1999 ...