FA57SA50LC International Rectifier Corp., FA57SA50LC Datasheet

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FA57SA50LC

Manufacturer Part Number
FA57SA50LC
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier Corp.
Datasheet

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Absolute Maximum Ratings
Thermal Resistance
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 watts.
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
R
R
I
I
I
P
V
E
I
E
dv/dt
T
T
V
www.irf.com
AR
D
D
DM
AS
J
STG
AR
ISO
D
GS
JC
@ T
@ T
CS
Fully Isolated Package
Easy to Use and Parallel
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Gate Charge Device
Low Drain to Case Capacitance
Low Internal Inductance
@T
Low On-Resistance
C
C
C
= 25°C
= 100°C
= 25°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
Parameter
Parameter
The low thermal
GS
GS
@ 10V
@ 10V
G
Typ.
0.05
–––
S
D
FA57SA50LC
HEXFET
-55 to + 150
Max.
62.5
228
625
± 20
725
5.0
3.0
2.5
1.3
S O T -2 2 7
57
36
57
®
R
V
DS(on)
Power MOSFET
Max.
DSS
0.20
–––
I
D
= 57A
= 500V
= 0.08
PD - 91650A
Units
Units
°C/W
W/°C
V/ns
N•m
mJ
mJ
kV
°C
W
A
V
A
1
2/1/99

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FA57SA50LC Summary of contents

Page 1

... J T Storage Temperature Range STG V Insulation Withstand Voltage (AC-RMS) ISO Mounting torque, M4 srew Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS www.irf.com FA57SA50LC HEXFET The low thermal @ 10V GS @ 10V GS Typ. ––– 0. 91650A ® Power MOSFET V ...

Page 2

... FA57SA50LC Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 3. Typical Transfer Characteristics www.irf.com 1000 TOP BOTTOM 100 10 ° 100 0.1 Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0 -60 -40 -20 Fig 4. Normalized On-Resistance FA57SA50LC VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 57A V = 10V ...

Page 4

... FA57SA50LC 15000 1MHz iss rss 12000 oss iss 9000 6000 C oss 3000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 T = 150 C ° J 100 ° 0.1 0.2 0.8 1.4 V ...

Page 5

... Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 FA57SA50LC D.U. 10V µ d(off ...

Page 6

... FA57SA50LC Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1500 1200 ...

Page 7

... Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% Fig 14. For N-Channel HEXFETS FA57SA50LC + =10V ...

Page 8

... FA57SA50LC SOT-227 Package Details . Tube QUANTITY PER SREW AND W ASHE R IN CLUDED WORLD HEADQUARTERS: 233 Kansas St ...

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