MRF646 Advanced Semiconductor, Inc., MRF646 Datasheet

MRF646

Manufacturer Part Number

MRF646

Description

Manufacturer

Advanced Semiconductor, Inc.

Datasheet

1.MRF646.pdf (1 pages)

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DESCRIPTION:

The

UHF large signal applications up to

512 MHz.

FEATURES:

• Internal Input Matching Network

• P

• Omnigold™ Metalization System

• Common Emitter, 12.5 V operation

MAXIMUM RATINGS

CHARACTERISTICS

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

SYMBOL

CBO

DISS

CEO

EBO

STG

ASI MRF646

= 4.8 dB at 45 W/470 MHz

CES

CEO

EBO

CES

117 W @ T

NPN SILICON RF POWER TRANSISTOR

-65 °C to +200 °C

-65 °C to +150 °C

= 5.0 mA

= 20 mA

1.5 °C/W

= 15 V

= 5.0 V

= 12.5 V

is designed for 12.5

9.0 A

4.0 V

36 V

16 V

NONETEST CONDITIONS

= 25°C

= 25 °C

OUT

= 45 W

= 4.0 A

Specifications are subject to change without notice.

f = 1.0 MHz

f = 470 MHz

1 = COLLECTOR

D IM

PACKAGE STYLE .500 6L FLG

MINIMUM TYPICAL MAXIMUM

4.0

4.8

.835 / 21.21

.490 / 12.45

.970 / 24.64

.150 / 3.43

.210 / 5.33

.200 / 5.08

.003 / 0.08

.090 / 2.29

.150 / 3.81

.120 / 3.05

M IN IM U M

inches / m m

2 = BASE

.725/18,42

.725 / 18.42

.045 / 1.14

.125 / 3.18

5.4

3&4 = EMITTER

.865 / 21.97

.510 / 12.95

.980 / 24.89

M AX IM U M

.160 / 4.06

.220 / 5.59

.210 / 5.33

.007 / 0.18

.105 / 2.67

.170 / 4.32

.285 / 7.24

.135 / 3.43

inches / m m

2x Ø N

FU LL R

150

125

MRF646

UNITS

REV. A

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