APT6015JVFR Advanced Power Technology, APT6015JVFR Datasheet
APT6015JVFR
Manufacturer Part Number
APT6015JVFR
Description
Manufacturer
Advanced Power Technology
Datasheet
1.APT6015JVFR.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT6015JVFR
Manufacturer:
FUJI
Quantity:
560
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
E
DS(on)
D(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
(Repetitive and Non-Repetitive)
2
(V
DS
C
APT Website - http://www.advancedpower.com
DS
1
= V
C
= 25°C
• Avalanche Energy Rated
• Popular SOT-227 Package
> I
= 25°C
4
GS
GS
D(on)
2
DS
DS
, I
= ±30V, V
GS
D
(V
= 600V, V
= 480V, V
x R
= 0V, I
= 2.5mA)
GS
DS(on)
= 10V, 17.5A)
D
DS
= 250µA)
GS
GS
Max, V
®
= 0V)
= 0V, T
= 0V)
GS
All Ratings: T
= 10V)
C
= 125°C)
600V
APT6015JFVR
C
®
= 25°C unless otherwise specified.
MIN
600
35
2
APT6015JFVR
-55 to 150
ISOTOP
35A 0.150
2500
TYP
±30
±40
600
140
450
300
3.6
35
35
50
®
0.150
±100
MAX
250
25
"UL Recognized"
4
G
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
D
S
Related parts for APT6015JVFR
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Manufacturer:
Advanced Power Technology
Datasheet:
Part Number:
Description:
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Manufacturer:
Advanced Power Technology
Datasheet:
APT6015JVFR Summary of contents
Page 1
POWER MOS V ® Power MOS new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t (on) Turn-on Delay Time d t ...
Page 3
V GS =6V, 7V, 10V & 15V 100 150 200 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 -55° +25° ...
Page 4
OPERATION HERE 100 LIMITED (ON =+25° =+150°C SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA ...