BSM100GB120DN2 Eupec GmbH, BSM100GB120DN2 Datasheet
BSM100GB120DN2
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BSM100GB120DN2 Summary of contents
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BSM 100 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...
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BSM 100 GB 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 100 ...
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BSM 100 GB 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 6.8 Gon Rise time V = 600 V, ...
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BSM 100 GB 120 DN2 Power dissipation tot C parameter: T 150 °C j 900 W P 700 tot 600 500 400 300 200 100 Collector current ...
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BSM 100 GB 120 DN2 Typ. output characteristics parameter µ ° 200 A 17V 15V 160 I 13V C 11V 9V 140 7V 120 100 ...
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BSM 100 GB 120 DN2 Typ. gate charge Gate parameter 100 A C puls 600 100 200 300 ...
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BSM 100 GB 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...
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BSM 100 GB 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 200 A 160 I F 140 120 T =125°C j 100 0.0 0.5 1.0 ...
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BSM 100 GB 120 DN2 Package Outlines Dimensions in mm Weight: 420 g Circuit Diagram 9 Oct-21-1997 ...
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... Technische Information / Technical Information IGBT-Module BSM100GB120DN2 IGBT-Modules Anhang C-Serie Appendix C-series Gehäuse spezifische Werte Housing specific values Modulinduktivität stray inductance module Gehäusemaße C-Serie Package outline C-series typ sCE Appendix C-series nH Appendix_C-Serie_BSM100GB120DN2.xls 2001-09-20 ...