IS41C16257-35KL Integrated Silicon Solution, IS41C16257-35KL Datasheet

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IS41C16257-35KL

Manufacturer Part Number
IS41C16257-35KL
Description
Manufacturer
Integrated Silicon Solution
Datasheet

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Part Number:
IS41C16257-35KL
Manufacturer:
ISSI
Quantity:
20 000
IS41C16257
IS41LV16257
256K x 16 (4-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
KEY TIMING PARAMETERS
FEATURES
• Fast access and cycle time
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode: RAS-Only, CAS-before-RAS
• JEDEC standard pinout
• Single power supply:
• Byte Write and Byte Read operation via two CAS
• Industrial temperature available
• Lead-free available
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. C
12/19/05
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Parameter
Max. RAS Access Time (t
Max. CAS Access Time (t
Max. Column Address Access Time (t
Min. Fast Page Mode Cycle Time (t
Min. Read/Write Cycle Time (t
(CBR), and Hidden
-- 5V ± 10% (IS41C16257)
-- 3.3V ± 10% (IS41LV16257)
RAC
CAC
)
)
RC
)
PC
)
AA
)
-35
35
10
18
12
60
1-800-379-4774
110
-45
60
15
30
25
DESCRIPTION
The
x 16-bit high-performance CMOS Dynamic Random Access
Memories. Fast Page Mode allows 512 random accesses
within a single row with access cycle time as short as 12 ns
per 16-bit word. The Byte Write control, of upper and lower
byte, makes these devices ideal for use in 16- and 32-bit
wide data bus systems.
These features make the IS41C16257 and the IS41LV16257
ideally suited for high band-width graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
The IS41C16257 and the IS41LV16257 are packaged in a
40-pin, 400-mil SOJ and TSOP (Type II).
ISSI
Unit
ns
ns
ns
ns
ns
IS41C16257 and the IS41LV16257 are 262,144
JANUARY 2006
ISSI
®
1

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IS41C16257-35KL Summary of contents

Page 1

... These features make the IS41C16257 and the IS41LV16257 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C16257 and the IS41LV16257 are packaged in a 40-pin, 400-mil SOJ and TSOP (Type II). -35 -45 Unit ...

Page 2

... IS41C16257 IS41LV16257 FUNCTIONAL BLOCK DIAGRAM OE WE CAS LCAS CLOCK UCAS GENERATOR RAS RAS CLOCK GENERATOR REFRESH COUNTER ADDRESS BUFFERS A0-A8 PIN CONFIGURATIONS 40-Pin TSOP (Type II) VCC 1 40 GND I/ I/O15 I/ I/O14 I/ I/O13 I/ I/O12 VCC 6 35 GND I/ I/O11 I/ ...

Page 3

... IS41C16257 IS41LV16257 TRUTH TABLE Function Standby Read: Word Read: Lower Byte Read: Upper Byte Write: Word (Early Write) Write: Lower Byte (Early Write) Write: Upper Byte (Early Write) (1,2) Read-Write Hidden Refresh 2) Read L∅H∅L Write L∅H∅L RAS-Only Refresh CBR Refresh ...

Page 4

... The IS41C16257 and the IS41LV16257 CAS function is determined by the first CAS (LCAS or UCAS) transitioning LOW and the last transitioning back HIGH. The two CAS controls give the IS41C16257 both BYTE READ and BYTE WRITE cycle capabilities. Memory Cycle A memory cycle is initiated by bringing RAS LOW and it is terminated by returning both RAS and CAS HIGH ...

Page 5

... IS41C16257 IS41LV16257 ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Voltage on Any Pin Relative to GND T V Supply Voltage CC I Output Current OUT P Power Dissipation D T Operation Temperature A T Storage Temperature STG Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 6

... IS41C16257 IS41LV16257 ELECTRICAL CHARACTERISTICS Symbol Parameter I Input Leakage Current IL I Output Leakage Current IO V Output High Voltage Level OH V Output Low Voltage Level OL I Stand-by Current: TTL Stand-by Current: TTL Stand-by Current: CMOS Stand-by Current: CMOS Operating Current: ...

Page 7

... IS41C16257 IS41LV16257 AC CHARACTERISTICS otherwise noted.) Symbol Parameter t Random READ or WRITE Cycle Time RC Access Time from RAS t RAC Access Time from CAS t CAC t Access Time from Column-Address AA RAS Pulse Width t RAS RAS Precharge Time t RP CAS Pulse Width t CAS CAS Precharge Time ...

Page 8

... IS41C16257 IS41LV16257 AC CHARACTERISTICS otherwise noted.) Symbol Parameter Column-Address Setup Time to CAS t ACH Precharge during WRITE Cycle OE Hold Time from WE during t OEH READ-MODIFY-WRITE cycle t Data-In Setup Time DS t Data-In Hold Time DH t READ-MODIFY-WRITE Cycle Time RWC RAS to WE Delay Time during t RWD ...

Page 9

... IS41C16257 IS41LV16257 Notes initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the (MIN) and V (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between V ...

Page 10

... IS41C16257 IS41LV16257 FAST-PAGE-MODE READ CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE Note: is referenced from rising edge of CAS OFF RAS t CSH t RSH CAS CLCH RCD RAD RAL t t RAH ASC Column t RCS RAC t CAC ...

Page 11

... IS41C16257 IS41LV16257 FAST PAGE MODE READ-MODIFY-WRITE CYCLE RAS t t CRP RCD UCAS/LCAS RAD t RAH t ASR ADDRESS Row t RCS RAC t CLZ I/O0-I/O15 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. C 12/19/05 t RASP t CSH t CAS CPWD t CAH t t ASC ASC ...

Page 12

... IS41C16257 IS41LV16257 FAST-PAGE-MODE EARLY WRITE CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O 12 (OE = DON'T CARE RAS t CSH t RSH CAS CLCH RCD RAD RAL RAH ASC CAH t ACH Column t CWL t RWL t WCR t t WCS WCH DHR ...

Page 13

... IS41C16257 IS41LV16257 FAST-PAGE-MODE READ WRITE CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. C 12/19/05 (LATE WRITE and READ-MODIFY-WRITE Cycles) t RWC t RAS t CSH t t RCD RAD RAH ASC CAH Column t RWD t t RCS t AWD ...

Page 14

... IS41C16257 IS41LV16257 FAST PAGE MODE EARLY WRITE CYCLE RAS t t CRP RCD UCAS/LCAS RAD t RAH t ASR ADDRESS Row t WCS WE t WCR OE t DHR t DS I/O0-I/O15 14 t RASP t t CSH t t CAS CAH t ASC t ASC t AR Column Column t t CWL ...

Page 15

... IS41C16257 IS41LV16257 AC WAVEFORMS (With WE-Controlled Disable) READ CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE RAS RAS-ONLY REFRESH CYCLE RAS RAS RAS RAS t CRP UCAS/LCAS t ASR ADDRESS I/O Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. C 12/19/05 t CSH t t RCD CAS RAD ...

Page 16

... IS41C16257 IS41LV16257 CBR CBR CBR CBR CBR REFRESH CYCLE (Addresses; WE DON'T CARE) t RAS t RPC t CP UCAS/LCAS I/O HIDDEN REFRESH CYCLE (1) RAS t CRP UCAS/LCAS t ASR ADDRESS Row I/O OE Notes Hidden Refresh may also be performed after a Write Cycle. In this case LOW and OE = HIGH. ...

Page 17

... IS41C16257-45TL 400-mil TSOP (Type II), Lead-free Industrial Range: –40⋅ ⋅ ⋅ ⋅ ⋅ 85⋅ ⋅ ⋅ ⋅ ⋅ C Speed (ns) Order Part No. Package 35 IS41C16257-35KI 400-mil SOJ IS41C16257-35KLI 400-mil SOJ, Lead-free IS41C16257-35TI 400-mil TSOP (Type II) IS41C16257-35TLI 400-mil TSOP (Type II), Lead-free 60 IS41C16257-45KI 400-mil SOJ ...

Page 18

... BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

Page 19

... BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products ...

Page 20

... BSC E 9.02 9.42 0.462 0.4701 L 0.40 0.60 0.016 0.0236 Integrated Silicon Solution, Inc. PK13197T40 Rev. C 08/013/99 N/2+1 Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D1 and E do not include mold flash protru sions and package 4. Formed leads shall be planar with respect to one another within 0 ...

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