MBM29DL800TA-90PFTN SPANSION, MBM29DL800TA-90PFTN Datasheet

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MBM29DL800TA-90PFTN

Manufacturer Part Number
MBM29DL800TA-90PFTN
Description
Manufacturer
SPANSION
Datasheet

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SPANSION Flash Memory
TM
Data Sheet
September 2003
TM
This document specifies SPANSION
memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
TM
There is no change to this datasheet as a result of offering the device as a SPANSION
product. Future routine
revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
TM
Please contact your local AMD or Fujitsu sales office for additional information about SPANSION
memory
solutions.

Related parts for MBM29DL800TA-90PFTN

MBM29DL800TA-90PFTN Summary of contents

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... Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a SPANSION revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with " ...

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... FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8M (1M MBM29DL800TA FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard worldwide pinouts (Pin compatible with MBM29LV800TA/BA) 48-pin TSOP(1) (Package suffix: PFTN – ...

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MB M29DL800TA (Continued) • Sector protection Hardware method disables any combination of sectors from program or erase operations • Sector Protection Set function by Extended sector protection command • Fast Programming Function by Extended Command • Temporary sector unprotection Temporary ...

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... MB M29DL800TA GENERAL DESCRIPTION The MBM29DL800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized bytes of 8 bits each or 512 K words of 16 bits each. The MBM29DL800TA/BA are offered in a 48-pin TSOP(1) and 48-ball FBGA packages. These devices are designed to be programmed in-system with the standard system 3 ...

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... BLOCK DIAGRAM RESET State Control WE CE Command OE Register BYTE /MBM29DL800BA -70/90 MBM29DL800TA/MBM29DL800BA +0 3.3 V -70 –0 3.0 V — –0 Bank 2 Address Cell Matrix (Bank 2) X-Decoder RY/BY Status X-Decoder Bank 1 Address Cell Matrix (Bank 1) -70/90 — - ...

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... RY/BY 15 N.C. 14 N.C. MBM29DL800TA/MBM29DL800BA 13 RESET N. /MBM29DL800BA -70/90 TSOP( (Marking Side) BYTE ...

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MB M29DL800TA (Continued ...

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MB M29DL800TA PIN DESCRIPTION Pin Name Function Address Inputs - Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output Hardware Reset Pin/Temporary Sector ...

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... MB M29DL800TA DEVICE BUS OPERATION MBM29DL800TA/BA User Bus Operations Table (BYTE = V Operation 1 Auto-Select Manufacturer Code* Auto-Select Device Code* 1 Read* 3 Standby Output Disable Write (Program/Erase) Enable Sector Protection Verify Sector Protection * Temporary Sector Unprotection* 5 Reset (Hardware)/Standby MBM29DL800TA/BA User Bus Operations Table (BYTE = V ...

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... “H” or “L” for all address commands except or Program Address (PA), Sector 12 18 Address (SA), and Bank Address (BA). Bus operations are defined in “MBM29DL800TA/BA User Bus Operations Tables (BYTE = )” =Address of the memory location to be read PA =Address of the memory location to be programmed Addresses are latched on the falling edge of the write pulse ...

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... MB M29DL800TA MBM29DL800TA/BA Sector Protection Verify Autoselect Codes Table Type Manufacture’s Code MBM29DL800TA Device Code MBM29DL800BA Sector Protection * for Byte mode. At Byte mode Outputs 01h at protected sector addresses and outputs 00h at unprotected sector addresses. Type Code Manufacturer’s Code ...

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... K byte 5FFFFh 64 K byte 4FFFFh 64 K byte 3FFFFh 64 K byte 2FFFFh 64 K byte 1FFFFh 64 K byte 0FFFFh 64 K byte 00000h MBM29DL800TA Sector Architecture /MBM29DL800BA -70/ 16) 7FFFFh 64 K byte 7DFFFh 64 K byte 79FFFh 64 K byte 78FFFh 64 K byte 77FFFh 64 K byte ...

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MB M29DL800TA Sector Address Bank Bank Sector Address SA21 SA20 SA19 SA18 SA17 SA16 SA15 1 ...

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... MB M29DL800TA Sector Address Table (MBM29DL800TA) Sector Address Bank Bank Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 Bank 2 SA7 SA8 ...

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... The bank selection can be selected by bank address (A The MBM29DL800TA/BA have two banks which contain Bank 1 (16 KB, 32 KB, 8 KB, 8 KB, 8 KB, 8 KB, 32 KB, and 16 KB) and Bank 2 (64 KB The simultaneous operation can not execute multi-function mode in the same bank. “Simultaneous Operation Table” ...

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... To activate this mode, MBM29DL800TA/BA automatically switch themselves to low power mode when MBM29DL800TA/BA addresses remain stably during access fine of 150 ns not necessary to control CE, WE, and OE on the mode. Under the mode, the current consumed is typically 1 A (CMOS Level). ...

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... should be set to the sector to be protected. “Sector Address Tables (MBM29DL800TA/BA)” in FLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector address for each of the twenty two (22) individual sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector addresses must be held constant during the WE pulse. See “(13) AC Waveforms for Sector Protection” ...

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... Following the command write, a read cycle from address (BA)00h retrieves the manufacture code of 04h. A read cycle from address (BA)01h for 16((BA)02h for 8) returns the device code (MBM29DL800TA = 4Ah and MBM29DL800BA = CBh for 8 mode; MBM29DL800TA = 224Ah and MBM29DL800BA = 22CBh for 16 mode). ...

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MB M29DL800TA To terminate the operation necessary to write the Read/Reset command sequence into the register, and also to write the Autoselect command during the operation, execute it after writing Read/Reset command sequence. Byte/Word Programming The devices are ...

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... After time-out from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29DL800TA/BA Command Definitions Table” in DEVICE BUS OPERATION. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 µ ...

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... Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). (Refer to TM “(8) Embedded Program (3) Extended Sector Protection In addition to normal sector protection, the MBM29DL800TA/BA has Extended Sector Protection as extended function. This function enable to protect sector by forcing V Unlike conventional procedure not necessary to force V RESET pin requires V for sector protection in this mode ...

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MB M29DL800TA Write Operation Status Detailed in “Hardware Sequence Flags Table” are all the status flags that can determine the status of the bank for the current mode operation. The read operation from the bank where is not operate Embedded ...

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... DQ 6 Toggle Bit I The MBM29DL800TA/BA also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the devices will result in DQ toggling between one and zero ...

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... Data Polling is the only operating function of the devices under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in “MBM29DL800TA/BA User Bus Operations Tables (BYTE = V ...

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... RY/BY Ready/Busy The MBM29DL800TA/BA provide a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/ write or erase operation ...

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... BYTE Timing Diagram for Write Operations” in TIMING DIAGRAM for the timing diagram. Data Protection The MBM29DL800TA/BA are designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the devices automatically reset the internal state machine in the Read mode ...

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MB M29DL800TA ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with respect to Ground All pins except A OE, RESET * OE, and RESET * Power Supply Voltage* ...

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MB M29DL800TA MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V –2.0 V Figure +2.0 V Figure 2 +14.0 V +13 +0 Note : This waveform is applied for ...

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MB M29DL800TA DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current * Current (Standby Current (Standby, Reset) CC ...

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... CE or OE, Whichever Occurs First RESET Pin Low to Read Mode CE to BYTE Switching Low or High Note: Test Conditions: Output Load: 1TTL gate and 30 pF (MBM29DL800TA/BA-70) 1TTL gate and 100 pF (MBM29DL800TA/BA-90 Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1 ...

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MB M29DL800TA • Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time ...

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MB M29DL800TA (Continued) Parameter 2 CE Setup Time to WE Active * Recover Time From RY/BY RESET Pulse Width RESET Hold Time Before Read BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY ...

Page 33

MB M29DL800TA ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle TSOP(1) PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance Notes : Test conditions T = 25°C, f ...

Page 34

MB M29DL800TA TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address High-Z Outputs /MBM29DL800BA -70/90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from H to ...

Page 35

MB M29DL800TA (2) AC Waveforms for Hardware Reset/Read Operations Address RESET Outputs (3) Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL A0h ...

Page 36

MB M29DL800TA (4) Alternate CE Controlled Program Operations Address Data Notes address of the memory location to be programmed data to be programmed at byte address the output ...

Page 37

MB M29DL800TA (5) AC Waveforms Chip/Sector Erase Operations Address GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h (Word) for Chip Erase. Note : ...

Page 38

MB M29DL800TA (6) AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data BUSY RY/ Valid Data (The device has completed the ...

Page 39

MB M29DL800TA (7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations Address OEH /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded ...

Page 40

MB M29DL800TA (8) RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY (9) RESET/RY/BY Timing Diagram WE RESET RY/BY /MBM29DL800BA -70/90 Rising edge of the last WE pulse Entire programming or erase operations t BUSY ...

Page 41

MB M29DL800TA (10) Timing Diagram for Word Mode Configuration CE BYTE ELFH (11) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL ...

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MB M29DL800TA (13) AC Waveforms for Sector Protection SPAX ...

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MB M29DL800TA (14) Temporary Sector Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY (15) Bank-to-bank Read/Write Timing Diagram Read t RC Address BA1 Note DQ is read ...

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MB M29DL800TA (16 Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Toggle DQ and with read from the erase-suspended ...

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MB M29DL800TA (17) Extended Sector Protection Timing Diagram VCS RESET t VLHT t VIDR Address Data SPAX : Sector Address to be protected SPAY : Next Sector ...

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MB M29DL800TA FLOW CHART (1) Embedded Program TM Algorithm EMBEDDED ALGORITHM Increment Address Notes : The sequence is applied for The addresses differ from /MBM29DL800BA -70/90 Start Write Program Command Sequence (See below) Data Polling No Verify Data ? Yes ...

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MB M29DL800TA (2) Embedded Erase TM Algorithm EMBEDDED ALGORITHM Chip Erase Command Sequence Notes : The sequence is applied for The addresses differ from 46 /MBM29DL800BA -70/90 Start Write Erase Command Sequece (See below) Data Polling No Data = FFh ...

Page 48

MB M29DL800TA (3) Data Polling Algorithm rechecked even /MBM29DL800BA -70/90 Start Read Byte ( Byte address for programming 7 0 Addr Any of the ...

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MB M29DL800TA (4) Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling /MBM29DL800BA -70/90 Start Read ...

Page 50

MB M29DL800TA (5) Sector Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode /MBM29DL800BA -70/90 Start Setup Sector Addr ...

Page 51

MB M29DL800TA (6) Temporary Sector Unprotection Algorithm *1 : All protected sectors are unprotected All previously protected sectors are protected once again. 50 /MBM29DL800BA -70/90 Start RESET = Perform Erase or Program Operations RESET = ...

Page 52

MB M29DL800TA (7) Extended Sector Protection Algorithm Device is Operating in Temporary Sector Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed /MBM29DL800BA -70/90 Start RESET = V ID Wait ...

Page 53

MB M29DL800TA (8) Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes : The sequence is applied for The addresses differ from 52 /MBM29DL800BA -70/90 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No ...

Page 54

... MB M29DL800TA ORDERING INFORMATION Part No. MBM29DL800TA-70PFTN MBM29DL800TA-90PFTN MBM29DL800TA-70PFTR MBM29DL800TA-90PFTR MBM29DL800TA-70PBT MBM29DL800TA-90PBT MBM29DL800BA-70PFTN MBM29DL800BA-90PFTN MBM29DL800BA-70PFTR MBM29DL800BA-90PFTR MBM29DL800BA-70PBT MBM29DL800BA-90PBT MBM29DL800 T A -70 DEVICE NUMBER/DESCRIPTION MBM29DL800 8Mega-bit (1M 3.0 V-only Read, Program, and Erase /MBM29DL800BA -70/90 Package Access Time 48-pin plastic TSOP (1) (FPT-48P-M19) (Normal Bend) 48-pin plastic TSOP (1) (FPT-48P-M20) ...

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MB M29DL800TA PACKAGE DIMENSIONS 48-pin plastic TSOP (1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 2002 FUJITSU LIMITED F48029S-c-5-6 C 48-pin plastic TSOP (1) (FPT-48P-M20) LEAD No. 1 INDEX 24 "A" * 18.40 (.724 20.00 ...

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MB M29DL800TA (Continued) 48-pin plastic FBGA (BGA-48P-M12) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48012S-c-3-3 C /MBM29DL800BA -70/90 +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 6.00±0.20 4.00(.157) (.236±.008 (48-ø.018±.004) -70/90 5.60(.220) 0.80(.031)TYP 6 5 ...

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MB M29DL800TA -70/90 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented ...

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