MBM29DL800TA-90PFTN Meet Spansion Inc., MBM29DL800TA-90PFTN Datasheet
MBM29DL800TA-90PFTN
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MBM29DL800TA-90PFTN Summary of contents
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... There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary. For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number MBM29DL800TA/BA / -70/90 -70/90 ...
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... This page left intentionally blank MBM29DL800TA/BA_DS05-20860-7E August 6, 2007 ...
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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
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... FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8M (1M × 512K × 16) BIT MBM29DL800TA ■ FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard worldwide pinouts (Pin compatible with MBM29LV800TA/BA) 48-pin TSOP(1) (Package suffix: PFTN – ...
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MB M29DL800TA (Continued) • Sector protection Hardware method disables any combination of sectors from program or erase operations • Sector Protection Set function by Extended sector protection command • Fast Programming Function by Extended Command • Temporary sector unprotection Temporary ...
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... MB M29DL800TA ■ GENERAL DESCRIPTION The MBM29DL800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized bytes of 8 bits each or 512 K words of 16 bits each. The MBM29DL800TA/BA are offered in a 48-pin TSOP(1) and 48-ball FBGA packages. These devices are designed to be programmed in-system with the standard system 3 ...
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... Bank 2 Address RESET State Control WE CE Command OE Register BYTE Bank 1 Address /MBM29DL800BA -70/90 MBM29DL800TA/MBM29DL800BA +0.3 V -70 –0.3 V +0.6 V — –0 Cell Matrix (Bank 2) X-Decoder RY/BY Status X-Decoder Cell Matrix (Bank 1) Retired Product DS05-20860-7E_August 6, 2007 -70/90 — - ...
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... /MBM29DL800BA -70/90 TSOP(1) (Marking Side) MBM29DL800TA/MBM29DL800BA Normal Bend (FPT-48P-M19) (Marking Side) MBM29DL800TA/MBM29DL800BA Reverse Bend (FPT-48P-M20) Retired Product DS05-20860-7E_August 6, 2007 -70/ BYTE ...
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MB M29DL800TA (Continued ...
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MB M29DL800TA ■ PIN DESCRIPTION Pin Name Address Inputs - Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output Hardware Reset Pin/Temporary Sector ...
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... MB M29DL800TA ■ DEVICE BUS OPERATION MBM29DL800TA/BA User Bus Operations Table (BYTE = V Operation 1 Auto-Select Manufacturer Code* Auto-Select Device Code* 1 Read* 3 Standby Output Disable Write (Program/Erase Enable Sector Protection Verify Sector Protection * Temporary Sector Unprotection* 5 Reset (Hardware)/Standby MBM29DL800TA/BA User Bus Operations Table (BYTE = V ...
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... “H” or “L” for all address commands except or Program Address (PA), Sector 12 18 Address (SA), and Bank Address (BA). • Bus operations are defined in “MBM29DL800TA/BA User Bus Operations Tables (BYTE = )”. IL • RA =Address of the memory location to be read PA =Address of the memory location to be programmed Addresses are latched on the falling edge of the write pulse ...
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... MB M29DL800TA MBM29DL800TA/BA Sector Protection Verify Autoselect Codes Table Type Manufacture’s Code Byte MBM29DL800TA Word Device Code Byte MBM29DL800BA Word Sector Protection * for Byte mode. At Byte mode Outputs 01h at protected sector addresses and outputs 00h at unprotected sector addresses. Type Code Manufacturer’ ...
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... K byte 64 K byte 64 K byte 64 K byte 64 K byte 64 K byte Bank byte 64 K byte 64 K byte 64 K byte 64 K byte 64 K byte 64 K byte MBM29DL800TA Sector Architecture 14 /MBM29DL800BA -70/90 (×8) (×16) FFFFFh 7FFFFh FBFFFh 7DFFFh F3FFFh 79FFFh F1FFFh 78FFFh ...
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MB M29DL800TA Sector Address Table (MBM29DL800BA) Sector Address Bank Bank Sector Address SA21 SA20 SA19 SA18 SA17 ...
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... Bank 1 SA18 SA19 SA20 SA21 Note : The address range The address range /MBM29DL800BA -70/90 Sector Address Table (MBM29DL800TA) Sector Size (Kbytes/ Kwords 64/32 00000h to 0FFFFh 64/32 10000h to 1FFFFh 0 X ...
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... The bank selection can be selected by bank address (A The MBM29DL800TA/BA have two banks which contain Bank 1 (16 KB, 32 KB, 8 KB, 8 KB, 8 KB, 8 KB, 32 KB, and 16 KB) and Bank 2 (64 KB × fourteen sectors). The simultaneous operation can not execute multi-function mode in the same bank. “Simultaneous Operation Table” ...
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... To activate this mode, MBM29DL800TA/BA automatically switch themselves to low power mode when MBM29DL800TA/BA addresses remain stably during access fine of 150 ns not necessary to control CE, WE, and OE on the mode. Under the mode, the current consumed is typically 1 µA (CMOS Level). ...
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... should be set to the sector to be protected. “Sector Address Tables (MBM29DL800TA/BA)” in ■FLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector address for each of the twenty two (22) individual sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector addresses must be held constant during the WE pulse. See “(13) AC Waveforms for Sector Protection” ...
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... Following the command write, a read cycle from address (BA)00h retrieves the manufacture code of 04h. A read cycle from address (BA)01h for ×16((BA)02h for ×8) returns the device code (MBM29DL800TA = 4Ah and MBM29DL800BA = CBh for ×8 mode; MBM29DL800TA = 224Ah and MBM29DL800BA = 22CBh for ×16 mode). ...
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MB M29DL800TA To terminate the operation necessary to write the Read/Reset command sequence into the register, and also to write the Autoselect command during the operation, execute it after writing Read/Reset command sequence. Byte/Word Programming The devices are ...
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... After time-out of 50 µs from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29DL800TA/BA Command Definitions Table” in ■DEVICE BUS OPERATION. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 µ ...
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... Algorithm for Fast Mode” in ■FLOW CHART Extended algorithm.) TM “(8) Embedded Program (3) Extended Sector Protection In addition to normal sector protection, the MBM29DL800TA/BA has Extended Sector Protection as extended function. This function enable to protect sector by forcing V Unlike conventional procedure not necessary to force V RESET pin requires V for sector protection in this mode ...
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MB M29DL800TA Write Operation Status Detailed in “Hardware Sequence Flags Table” are all the status flags that can determine the status of the bank for the current mode operation. The read operation from the bank where is not operate Embedded ...
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... DQ 6 Toggle Bit I The MBM29DL800TA/BA also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the devices will result in DQ toggling between one and zero ...
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... Data Polling is the only operating function of the devices under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in “MBM29DL800TA/BA User Bus Operations Tables (BYTE = V ...
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... RY/BY Ready/Busy The MBM29DL800TA/BA provide a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/ write or erase operation ...
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... BYTE Timing Diagram for Write Operations” in ■TIMING DIAGRAM for the timing diagram. Data Protection The MBM29DL800TA/BA are designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the devices automatically reset the internal state machine in the Read mode ...
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MB M29DL800TA ■ ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with respect to Ground All pins except A OE, RESET * OE, and RESET * Power Supply ...
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MB M29DL800TA ■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V – +2.0 V +14.0 V +13 +0 Note : This waveform is applied for A 30 /MBM29DL800BA ...
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MB M29DL800TA ■ DC CHARACTERISTICS Parameter Symbol Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current * Current (Standby Current (Standby, ...
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... CE or OE, Whichever Occurs First RESET Pin Low to Read Mode CE to BYTE Switching Low or High Note: Test Conditions: Output Load: 1TTL gate and 30 pF (MBM29DL800TA/BA-70) 1TTL gate and 100 pF (MBM29DL800TA/BA-90 Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1 ...
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MB M29DL800TA • Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time ...
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MB M29DL800TA (Continued) Parameter CE Setup Time to WE Active * 2 Recover Time From RY/BY RESET Pulse Width RESET Hold Time Before Read BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY ...
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MB M29DL800TA ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle 100,000 ■ TSOP(1) PIN CAPACITANCE Parameter Input Capacitance C Output Capacitance C Control Pin Capacitance C Notes : ...
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MB M29DL800TA ■ TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address Outputs 36 /MBM29DL800BA -70/90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from H ...
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MB M29DL800TA (2) AC Waveforms for Hardware Reset/Read Operations Address RESET High-Z Outputs (3) Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL WE ...
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MB M29DL800TA (4) Alternate CE Controlled Program Operations Address Data Notes: • address of the memory location to be programmed. • data to be programmed at byte address. • the output ...
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MB M29DL800TA (5) AC Waveforms Chip/Sector Erase Operations Address 555h GHWL WE t Data t VCS the sector address for Sector Erase. Addresses = 555h ...
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MB M29DL800TA (6) AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data BUSY RY/ Valid Data (The device has completed the Embedded ...
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MB M29DL800TA (7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations Address OEH /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded ...
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MB M29DL800TA (8) RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY (9) RESET/RY/BY Timing Diagram WE RESET RY/BY 42 /MBM29DL800BA -70/90 Rising edge of the last WE pulse t BUSY READY Retired Product DS05-20860-7E_August 6, 2007 -70/90 ...
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MB M29DL800TA (10) Timing Diagram for Word Mode Configuration CE BYTE ELFH (11) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL ...
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MB M29DL800TA (13) AC Waveforms for Sector Protection SPAX ...
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MB M29DL800TA (14) Temporary Sector Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY (15) Bank-to-bank Read/Write Timing Diagram Read t RC Address BA1 GHWL WE Note ...
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MB M29DL800TA (16 Enter Erase Embedded Suspend Erasing WE Erase Toggle DQ and with read from the erase-suspended sector. 2 ...
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MB M29DL800TA (17) Extended Sector Protection Timing Diagram VCS RESET t VLHT t VIDR Address Data 60h SPAX : Sector Address to be protected SPAY : ...
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MB M29DL800TA ■ FLOW CHART (1) Embedded Program TM Algorithm EMBEDDED ALGORITHM Increment Address Notes : • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. 48 /MBM29DL800BA -70/90 Start Write Program Command ...
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MB M29DL800TA (2) Embedded Erase TM Algorithm EMBEDDED ALGORITHM Chip Erase Command Sequence Notes : • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. /MBM29DL800BA -70/90 Start Write Erase Command Sequece (See ...
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MB M29DL800TA (3) Data Polling Algorithm * : DQ is rechecked even /MBM29DL800BA -70/90 Start Read Byte ( Byte address for programming 7 0 Addr Any of the ...
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MB M29DL800TA (4) Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling as DQ /MBM29DL800BA -70/90 Start Read Addr. ...
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MB M29DL800TA (5) Sector Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode /MBM29DL800BA -70/90 Start Setup Sector Addr ...
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MB M29DL800TA (6) Temporary Sector Unprotection Algorithm *1 : All protected sectors are unprotected All previously protected sectors are protected once again. /MBM29DL800BA -70/90 Start RESET = Perform Erase or Program Operations RESET = V ...
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MB M29DL800TA (7) Extended Sector Protection Algorithm Device is Operating in Temporary Sector Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed 54 /MBM29DL800BA -70/90 Start RESET = V ID ...
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MB M29DL800TA (8) Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes : • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. /MBM29DL800BA -70/90 Start 555h/AAh 2AAh/55h 555h/20h ...
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... MB M29DL800TA ■ ORDERING INFORMATION Part No. MBM29DL800TA-70PFTN MBM29DL800TA-90PFTN MBM29DL800TA-70PFTR MBM29DL800TA-90PFTR MBM29DL800TA-70PBT MBM29DL800TA-90PBT MBM29DL800BA-70PFTN MBM29DL800BA-90PFTN MBM29DL800BA-70PFTR MBM29DL800BA-90PFTR MBM29DL800BA-70PBT MBM29DL800BA-90PBT MBM29DL800 T A -70 DEVICE NUMBER/DESCRIPTION MBM29DL800 8Mega-bit (1M × 8-Bit or 512 K × 16-Bit) CMOS Flash Memory 3.0 V-only Read, Program, and Erase 56 /MBM29DL800BA -70/90 Package 48-pin plastic TSOP (1) ...
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MB M29DL800TA ■ PACKAGE DIMENSIONS Note1 : * : Values do not include resin protrusion. 48-pin plastic TSOP (1) (FPT-48P-M19) Note2 : Pins width and pins thickness include plating thickness. LEAD No. 1 INDEX 24 20.00 ± (.787 ± .008) ...
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MB M29DL800TA (Continued) 48-pin plastic FBGA (BGA-48P-M12) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48012S-c-3 /MBM29DL800BA -70/90 +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 6.00±0.20 4.00(.157) (.236±.008) Retired Product DS05-20860-7E_August 6, 2007 -70/90 5.60(.220) 0.80(.031)TYP ...
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MB M29DL800TA Revision History Revision DS05-20860-7E（August 6, 2007） The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. /MBM29DL800BA -70/90 Retired ...
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MB M29DL800TA -70/90 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, ...