MBM29LV800TA-90PFTN Meet Spansion Inc., MBM29LV800TA-90PFTN Datasheet

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MBM29LV800TA-90PFTN

Manufacturer Part Number
MBM29LV800TA-90PFTN
Description
Manufacturer
Meet Spansion Inc.
Datasheet

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MBM29LV800TA
MBM29LV800BA
Data Sheet (Retired Product)
This product has been retired and is not recommended for new designs. Availability of this document is retained for reference
and historical purposes only.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number MBM29LV800TA/BA
-70/-90
-70/-90
/
Revision DS05-20845-7E
Issue Date July 31, 2007
90
MBM29LV800TA
-70/-90
Cover Sheet
/MBM29LV800BA
-70/-

Related parts for MBM29LV800TA-90PFTN

MBM29LV800TA-90PFTN Summary of contents

Page 1

... There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary. For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number MBM29LV800TA/BA / -70/-90 -70/-90 ...

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... This page left intentionally blank MBM29LV800TA/BA_DS05-20845-7E July 31, 2007 ...

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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...

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... MBM29LV800TA ■ DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP, and 48-ball FBGA packages. These devices are designed to be programmed in-system with the standard system 3 ...

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... Fujitsu’s Flash technology combines years of EPROM and E of quality, reliability, and cost effectiveness. The MBM29LV800TA/BA memories electrically erase the entire chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection. ■ ...

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... MBM29LV800TA ■ FEATURES • Single 3.0 V Read, Program, and Erase Minimizes system level power requirements • Compatible with JEDEC-standard Commands Uses same software commands as E • Compatible with JEDEC-standard Worldwide Pinouts 48-pin TSOP(1) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) ...

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... (FPT-48P-M19 (Marking Side RY/BY 15 N.C. 14 N.C. MBM29LV800TA/MBM29LV800BA 13 RESET Reverse Bend N. (FPT-48P-M20) /MBM29LV800BA -70/- ...

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... MBM29LV800TA (Continued RY/ /MBM29LV800BA -70/-90 (TOP VIEW) Marking side ...

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... MBM29LV800TA ■ PIN DESCRIPTION Pin name Address Inputs - Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output RESET Hardware Reset Pin/Temporary Sector Unprotection BYTE Selects 8-bit or 16-bit mode V Device Ground SS V Device Power Supply CC N ...

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... MBM29LV800TA ■ BLOCK DIAGRAM RY/BY Buffer State BYTE Control RESET Command Register CE OE Low V Detector ■ LOGIC SYMBOL 19 10 /MBM29LV800BA -70/-90 RY/BY Erase Voltage Generator Program Voltage Chip Enable Generator Output Enable Logic STB Timer for Address Program/Erase ...

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... Refer to “7. Sector Protection” in “■FUNCTIONAL DESCRIPTIONS”. *3: WE can * 3.3 V ± 10 also used for the extended sector protection. MBM29LV800TA/800BA User Bus Operations Table (BYTE = V Operation 1 Auto-Select Manufacturer Code * 1 Auto-Select Device Code * Read * 3 Standby Output Disable ...

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... MBM29LV800TA MBM29LV800TA/800BA Sector Protection Verify Autoselect Codes Table Type Manufacture’s Code MBM29LV800TA Device Code MBM29LV800BA Sector Protection * for Byte mode. At Byte mode *2: Outputs 01h at protected sector addresses and outputs 00h at unprotected sector addresses. Type Code Manufacturer’s Code ...

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... “H” or “L” for all address commands except or Program Address (PA) and 11 18 Sector Address (SA) • Bus operations are defined in “MBM29LV800TA/BA User Bus Operations Tables (BYTE = V BYTE = V )” • Address of the memory location to be read PA = Address of the memory location to be programmed Addresses are latched on the falling edge of the WE pulse ...

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... MBM29LV800TA MBM29LV800TA/BA Extended Command Definitions Table Bus Command Write Sequence Cycles Req'd Word Set to 3 Fast Mode Byte Word Fast 2 1 Program* Byte Word Reset from 2 Fast Mode * 1 Byte Extended Word Sector 4 Byte Protect* 2 SPA : Sector address to be protected. Set sector address (SA) and ( Sector protection verify data ...

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... MBM29LV800TA Sector Architecture /MBM29LV800BA -70/-90 (×16) 7FFFFh 64K byte 7DFFFh 64K byte 7CFFFh 64K byte 7BFFFh 64K byte 77FFFh 64K byte ...

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... SA13 SA14 SA15 SA16 SA17 SA18 /MBM29LV800BA -70/-90 Sector Address Table (MBM29LV800TA Address Range (× 00000h to 0FFFFh 10000h to 1FFFFh 20000h to 2FFFFh 30000h to 3FFFFh ...

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... MBM29LV800TA Sector Address Table (MBM29LV800BA) Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 ...

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... FUNCTIONAL DESCRIPTION 1. Read Mode The MBM29LV800TA/BA have two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the output control and should be used to gate data to the output pins if a device is selected. ...

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... IL code (MBM29LV800TA = DAh and MBM29LV800BA = 5Bh for ×8 mode; MBM29LV800TA = 22DAh and MBM29LV800BA = 225Bh for ×16 mode). These two bytes/words are given in “MBM29LV800TA/800BA Sector Protection Verify Autoselect Codes Table” and “Extended Autoselect Code Table” (“■ DEVICE BUS OPERATION” ...

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... Temporary Sector Unprotection Algorithm” in “■FLOW CHART”. 9. RESET Hardware Reset The MBM29LV800TA/BA devices may be reset by driving the RESET pin to V requirement and has to be kept low (V Any operation in the process of being executed will be terminated and the internal state machine will be reset to the read mode 20 μ ...

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... XX01h for ×16(XX02h for ×8) returns the device code (MBM29LV800TA = DAh and MBM29LV800BA = 5Bh for ×8 mode; MBM29LV800TA = 22DAh and MBM29LV800BA = 225Bh for ×16 mode). (See “MBM29LV800TA/800BA Sector Protection Verify Autoselect Codes Table” and “Extended Autoselect Code Table” ...

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... WE. After time-out of 50 μs from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29LV800TA/800BA Standard Command Definitions Table” in “■ DEVICE BUS OPERATION”. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 µ ...

Page 23

... MBM29LV800TA within the 50 μs time-out window the timer is reset. (Monitor DQ is still open, see “12. DQ ”, Sector Erase Timer.) Any command other than Sector Erase or Erase Suspend 3 during this time-out period will reset the devices to the read mode, ignoring the previous command string. ...

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... Extended Command (1) Fast Mode MBM29LV800TA/BA has Fast Mode function. This mode dispenses with the initial two unclock cycles required in the standard program command sequence by writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command ...

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... DQ 6 Toggle Bit I The MBM29LV800TA/BA also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the devices will result in DQ toggling between one and zero ...

Page 26

... MBM29LV800TA The OE and WE pins will control the output disable functions as described in “MBM29LV800TA/BA User Bus Operations Tables (BYTE = V IH The DQ failure condition may also appear if a user tries to program a non blank location without erasing. In this 5 case the devices lock out and never complete the Embedded Algorithm operation. Hence, the system never ...

Page 27

... RY/BY Ready/Busy The MBM29LV800TA/BA provide a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/ write or erase operation ...

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... MBM29LV800TA sequences. The devices also incorporate several features to prevent inadvertent write cycles resulting form V and power-down transitions or system noise. 18. Low V Write Inhibit CC To avoid initiation of a write cycle during V than 2.3 V (typically 2.4 V are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored until ...

Page 29

... Symbol T stg OE, RESET * OUT GND = +2.0 V for periods ns. CC Conditions ⎯ A MBM29LV800TA/BA-70 MBM29LV800TA/BA-90 = GND = Retired Product DS05-20845-7E_July 31, 2007 -70/-90 Rating Unit Min Max –55 +125 °C –40 +85 °C –0 –0.5 +5.5 V –0.5 +13 ...

Page 30

... MBM29LV800TA ■ MAXIMUM OVERSHOOT /MAXIMUM UNDERSHOOT +0.6 V –0.5 V – +2.0 V +14.0 V +13 +0 Note: This waveform is applied for A 30 /MBM29LV800BA -70/- Figure 1 Maximum Undershoot Waveform Figure 2 Maximum Overshoot Waveform OE, and RESET. 9 Figure 3 Maximum Overshoot Waveform 2 Retired Product  ...

Page 31

... MBM29LV800TA ■ DC CHARACTERISTICS Parameter Symbol Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current * Current (Standby Current (Standby, Reset Current CC 3 (Automatic Sleep Mode) * Input Low Voltage Input High Voltage Voltage for Autoselect and Sector ...

Page 32

... CE or OE, Whichever Occurs First RESET Pin Low to Read Mode CE to BYTE Switching Low or High Note: Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29LV800TA/BA-70) 1 TTL gate and 100 pF (MBM29LV800TA/BA-90) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1 ...

Page 33

... MBM29LV800TA • Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Output Enable Hold Time Toggle and Data Polling Read Recover Time Before Write Read Recover Time Before Write ...

Page 34

... MBM29LV800TA ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle ■ PIN CAPACITANCE • TSOP(1) Parameter Input Capacitance Output Capacitance Control Pin Capacitance Notes: • Test conditions T = +25° 1.0 MHz A • ...

Page 35

... MBM29LV800TA ■ SWITCHING WAVEFORMS • Key to Switching Waveforms 1. AC Waveforms for Read Operations Address High-Z Outputs /MBM29LV800BA -70/-90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “ ...

Page 36

... MBM29LV800TA 2. AC Waveforms for Hardware Reset/Read Operations Address RESET Outputs 3. AC Waveforms for Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL A0h Data Notes: • address of the memory location to be programmed. • data to be programmed at byte address. ...

Page 37

... MBM29LV800TA 4. AC Waveforms for Alternate CE Controlled Program Operations Address GHEL CE Data Notes: • address of the memory location to be programmed. • data to be programmed at byte address. • the output of the complement of the data written to the device. 7 • the output of the data written to the device ...

Page 38

... MBM29LV800TA 5. AC Waveforms Chip/Sector Erase Operations Address GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h (Word), AAAh (Byte) : for Chip Erase. Note: These waveforms are for the ×16 mode. The addresses differ from ×8 mode. ...

Page 39

... MBM29LV800TA 6. AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data Valid Data (The device has completed the Embedded operation Waveforms for Toggle Bit I during Embedded Algorithm Operations CE t OEH WE t OES OE DQ Data ...

Page 40

... MBM29LV800TA 8. RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY 9. RESET/RY/BY Timing Diagram WE RESET RY/BY 10. Timing Diagram for Word Mode Configuration CE BYTE ELFH /MBM29LV800BA -70/-90 Rising edge of the last WE signal t BUSY READY t CE Data Output Data Output (DQ ( ...

Page 41

... MBM29LV800TA 11. Timing Diagram for Byte Mode Configuration CE BYTE t ELFL 12. BYTE Timing Diagram for Write Operations BYTE /MBM29LV800BA -70/-90 Data Output ( ( ACC FLQZ Falling edge of the last write signal Input Valid Retired Product  ...

Page 42

... MBM29LV800TA 13. AC Waveforms for Sector Protection Timing Diagram SPAX VLHT VLHT WE CE Data t VCS V CC SPAX:Sector Address for initial sector SPAY: Sector Address for next sector ...

Page 43

... MBM29LV800TA 14. Temporary Sector Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY 15 Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Toggle DQ and with Note DQ is read from the erase-suspended sector. 2 /MBM29LV800BA -70/-90 t Program or Erase Command Sequence ...

Page 44

... MBM29LV800TA 16. Extended Sector Protection Timing Diagram VCS RESET t VLHT t VIDR Add Data SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 250 μs (Min) 44 /MBM29LV800BA -70/-90 SPAX TIME-OUT 60h 60h Retired Product DS05-20845-7E_July 31, 2007 ...

Page 45

... MBM29LV800TA ■ FLOW CHART 1. Embedded Program TM Algorithm EMBEDDED ALGORITHM Increment Address Notes: • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. /MBM29LV800BA -70/-90 Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No Last Address ...

Page 46

... MBM29LV800TA 2. Embedded Erase TM Algorithm EMBEDDED ALGORITHM Chip Erase Command Sequence (Address/Command) : 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Notes: • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. 46 /MBM29LV800BA -70/-90 Start Write Erase Command Sequence (See Below) Data Polling ...

Page 47

... MBM29LV800TA 3. Data Polling Algorithm rechecked even /MBM29LV800BA -70/-90 Start Read Byte ( Address for programming 7 0 Addr Any of the sector addresses within the sector being erased during Yes sector erase or multiple sector DQ = Data? 7 erases operation = Any of the sector addresses within ...

Page 48

... MBM29LV800TA 4. Toggle Bit Algorithm *1: Read toggle bit twice to determine whether it is togglimg. *2: Recheck toggle bit because it may stop toggling /MBM29LV800BA -70/-90 Start Read ( Addr. = “H” or “L” *1 Read ( Addr. = “H” or “L” Toggle? Yes ...

Page 49

... MBM29LV800TA 5. Sector Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed *: byte mode /MBM29LV800BA -70/-90 Start Setup Sector Addr PLSCNT = RESET = Activate WE Pulse Time out 100 μ ...

Page 50

... MBM29LV800TA 6. Temporary Sector Unprotection Algorithm *1 : All protected sectors are unprotected All previously protected sectors are protected once again. 50 /MBM29LV800BA -70/-90 Start RESET = Perform Erase or Program Operations RESET = V IH Temporary Sector 2 Unprotection Completed* Retired Product DS05-20845-7E_July 31, 2007 -70/-90 ...

Page 51

... MBM29LV800TA 7. Extended Sector Protection Algorithm FAST MODE ALGORITHM Device is Operating in Temporary Sector Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed /MBM29LV800BA -70/-90 Start RESET = V ID Wait to 4 μs No Extended Sector Protection Entry? Yes To Setup Sector Protection ...

Page 52

... MBM29LV800TA 8. Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes: • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. 52 /MBM29LV800BA -70/-90 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes ...

Page 53

... MBM29LV800TA ■ ORDERING INFORMATION Part No. MBM29LV800TA-70PF MBM29LV800TA-90PF MBM29LV800TA-70PFTN MBM29LV800TA-90PFTN MBM29LV800TA-70PFTR MBM29LV800TA-90PFTR MBM29LV800TA-70PBT-SF2 MBM29LV800TA-90PBT-SF2 MBM29LV800TA-90PW MBM29LV800BA-70PF MBM29LV800BA-90PF MBM29LV800BA-70PFTN MBM29LV800BA-90PFTN MBM29LV800BA-70PFTR MBM29LV800BA-90PFTR MBM29LV800BA-70PBT-SF2 MBM29LV800BA-90PBT-SF2 MBM29LV800BA-90PW /MBM29LV800BA -70/-90 Package Access Time 44-pin plastic SOP (FPT-44P-M16) 48-pin plastic TSOP (1) (FPT-48P-M19) (Normal Bend) 48-pin plastic TSOP (1) (FPT-48P-M20) ...

Page 54

... MBM29LV800TA MBM29LV800 T A -70 DEVICE NUMBER/DESCRIPTION MBM29LV800 8Mega-bit (1M × 8-Bit or 512K × 16-Bit) CMOS Flash Memory 3.0 V-only Read, Program, and Erase 54 /MBM29LV800BA -70/-90 PFTN PACKAGE TYPE PFTN = PFTR = PF = PBT = PBT-SF2 =48-Ball Fine Pitch Ball Grid Array PW= SPEED OPTION See Product Selector Guide Device Revision ...

Page 55

... MBM29LV800TA ■ PACKAGE DIMENSIONS Note Values do not include resin protrusion. 48-pin plastic TSOP(1) (FPT-48P-M19) Note 2 : Pins width and pins thickness include plating thickness. LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2002 FUJITSU LIMITED F48029S-c-5-5 C Note Values do not include resin protrusion. ...

Page 56

... MBM29LV800TA 44-pin plastic SOP (FPT-44P-M16) +0.25 * 28.45 1.120 –0.20 44 INDEX 1 1.27(.050) 0.10(.004) 2001 FUJITSU LIMITED F44023S-c-5-5 C 48-pin plastic FBGA (BGA-48P-M12) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48012S-c-3 /MBM29LV800BA -70/-90 Note1: Pins width and pins thickness include plating thickness. Note2: * This dimension includes resin protrusion. ...

Page 57

... MBM29LV800TA (Continued) 48-pin plastic SCSP (WLP-48P-M03) 7.06±0.10(.278±.004) INDEX AREA (LASER MARKING) 0.10(.004 2001 FUJITSU LIMITED W48003S-c-1-1 C /MBM29LV800BA -70/-90 (3.50=0.50x7) ((.138=.020x7)) 0.50(.020) Y TYP 3.52±0.10 (2.50=0.50x5) (.139±.004) ((.098=.020x5)) 0.50(.020) TYP X 1.00(.039) Max. 0.25(.010) (Stand off) Min. ...

Page 58

... MBM29LV800TA MEMO 58 /MBM29LV800BA -70/-90 Retired Product DS05-20845-7E_July 31, 2007 -70/-90 ...

Page 59

... MBM29LV800TA Revision History Revision DS05-20845-7E(July 31, 2007) The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. /MBM29LV800BA -70/-90 Retired Product DS05-20845-7E_July 31, 2007 -70/-90 59 ...

Page 60

... MBM29LV800TA -70/-90 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 3545 North First Street, San Jose, CA 95134-1804, U ...

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