SST39VF040-90-4C-NH Silicon Storage Technology, Inc, SST39VF040-90-4C-NH Datasheet

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SST39VF040-90-4C-NH

Manufacturer Part Number
SST39VF040-90-4C-NH
Description
512 Kbit/1 Mbit (x8) multi-purpose flash
Manufacturer
Silicon Storage Technology, Inc
Datasheet

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FEATURES:
• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption:
• Sector-Erase Capability
• Fast Read Access Time:
• Latched Address and Data
PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/
020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8
CMOS Multi-Purpose Flash (MPF) manufactured with
SST’s proprietary, high performance CMOS SuperFlash
technology. The split-gate cell design and thick oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches. The SST39LF512/
010/020/040 devices write (Program or Erase) with a 3.0-
3.6V power supply. The SST39VF512/010/020/040
devices write with a 2.7-3.6V power supply. The devices
conform to JEDEC standard pinouts for x8 memories.
Featuring
SST39LF512/010/020/040 and SST39VF512/010/020/
040 devices provide a maximum Byte-Program time of 20
µsec. These devices use Toggle Bit or Data# Polling to indi-
cate the completion of Program operation. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, they
are offered with a guaranteed endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
The SST39LF512/010/020/040 and SST39VF512/010/
020/040 devices are suited for applications that require
convenient and economical updating of program, configu-
ration, or data memory. For all system applications, they
©2001 Silicon Storage Technology, Inc.
S71150-03-000 6/01
1
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
– 3.0-3.6V for SST39LF512/010/020/040
– 2.7-3.6V for SST39VF512/010/020/040
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 10 mA (typical)
– Standby Current: 1 µA (typical)
– Uniform 4 KByte sectors
– 45 ns for SST39LF512/010/020/040
– 55 ns for SST39LF020/040
– 70 and 90 ns for SST39VF512/010/020/040
high
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories
performance
395
Byte-Program,
the
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Fast Erase and Byte-Program:
• Automatic Write Timing
• End-of-Write Detection
• CMOS I/O Compatibility
• JEDEC Standard
• Packages Available
significantly improves performance and reliability, while low-
ering power consumption. They inherently use less energy
during Erase and Program than alternative flash technolo-
gies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time, the
total energy consumed during any Erase or Program oper-
ation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet surface mount requirements, the SST39LF512/
010/020/040 and SST39VF512/010/020/040 devices are
offered in 32-lead PLCC and 32-lead TSOP packages. The
39LF/VF010 is also offered in a 48-ball TFBGA package.
See Figures 1 and 2 for pinouts.
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
– Internal V
– Toggle Bit
– Data# Polling
– Flash EEPROM Pinouts and command sets
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm) for 1 Mbit
1 second (typical) for SST39LF/VF512
2 seconds (typical) for SST39LF/VF010
4 seconds (typical) for SST39LF/VF020
8 seconds (typical) for SST39LF/VF040
PP
Generation
These specifications are subject to change without notice.
MPF is a trademark of Silicon Storage Technology, Inc.
Data Sheet

Related parts for SST39VF040-90-4C-NH

SST39VF040-90-4C-NH Summary of contents

Page 1

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF512/010/020/040 – ...

Page 2

... Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 pulse, while the command (30H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit meth- ods ...

Page 3

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Data# Polling ( When the SST39LF512/010/020/040 and SST39VF512/ 010/020/040 are in the internal Program operation, any attempt to read DQ will produce the complement of the 7 true data. Once the Program operation is completed, DQ will produce true data ...

Page 4

... A0 A0 DQ0 DQ0 DQ0 FIGURE SSIGNMENTS FOR ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 X-Decoder I/O Buffers and Data Latches Control Logic SST39LF/VF512 SST39LF/VF512 ...

Page 5

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet SST39LF/VF040 SST39LF/VF020 SST39LF/VF010 SST39LF/VF512 A11 A11 A11 A11 A13 A13 A13 A13 A14 A14 A14 A14 A17 A17 NC NC WE# ...

Page 6

... X can but no other value ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 -A address lines will select the block 3.0-3.6V for SST39LF512/010/020/040 2.7-3.6V for SST39VF512/010/020/040 for SST39LF/VF010, A ...

Page 7

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet TABLE OFTWARE OMMAND Command 1st Bus Sequence Write Cycle 1 Addr Data Byte-Program 5555H AAH Sector-Erase 5555H AAH Chip-Erase 5555H AAH 4,5 Software ID Entry 5555H ...

Page 8

... LTH 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 2.7-3.6V AND Limits Min ...

Page 9

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet AC CHARACTERISTICS TABLE EAD YCLE IMING V = 3.0-3.6V SST39LF512/010/020/040 FOR DD Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time ...

Page 10

... for SST39LF/VF512 for SST39LF/VF010 for SST39LF/VF020 and A 18 for SST39LF/VF040 FIGURE 5: WE# C ONTROLLED ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 OLZ T CLZ DATA VALID ...

Page 11

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet 5555 ADDRESS OE# WE# DQ 7-0 AA SW0 Note Most significant address for SST39LF/VF512 for SST39LF/VF010, FIGURE 6: CE# C ONTROLLED ...

Page 12

... for SST39LF/VF512 for SST39LF/VF010 for SST39LF/VF020 and A 18 for SST39LF/VF040 FIGURE 9: WE# C ONTROLLED ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 OEH D IAGRAM ...

Page 13

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet 5555 ADDRESS A MS-0 CE# OE WE# DQ 7-0 AA SW0 Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minmum timings are met. (See Table 10) ...

Page 14

... AA CE# OE WE# SW0 FIGURE 12 OFTWARE XIT AND ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 2AAA 5555 IDA T WHP SW1 SW2 R ESET 14 Data Sheet 395 ILL F10.0 ...

Page 15

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 FIGURE 13 NPUT UTPUT TO DUT FIGURE 14 ...

Page 16

... A YTE ROGRAM LGORITHM ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Start Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: A0H Address: 5555H Load Byte ...

Page 17

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Internal Timer Byte-Program/ Erase Initiated Wait SCE Program/Erase Completed FIGURE 16 AIT PTIONS ©2001 Silicon Storage Technology, Inc. Toggle Bit Byte-Program/ Erase ...

Page 18

... FIGURE 17 OFTWARE OMMAND ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Software ID Exit & Reset Command Sequence Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH ...

Page 19

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Chip-Erase Command Sequence Load data: AAH Address: 5555H Load data: 55H Address: 2AAAH Load data: 80H Address: 5555H Load data: AAH Address: 5555H Load data: 55H ...

Page 20

... Speed Suffix1 SST39xFxxx - ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Suffix2 - XX Package Modifier leads balls Numeric = Die modifier Package Type N = PLCC W = TSOP (die up) (8mm x 14mm) ...

Page 21

... SST39VF020-90-4I-WH Valid combinations for SST39LF040 SST39LF040-45-4C-NH SST39LF040-45-4C-WH SST39LF040-55-4C-NH SST39LF040-55-4C-WH Valid combinations for SST39VF040 SST39VF040-70-4C-NH SST39VF040-70-4C-WH SST39VF040-90-4C-NH SST39VF040-90-4C-WH SST39VF040-90-4C-U1 SST39VF040-70-4I-NH SST39VF040-70-4I-WH SST39VF040-90-4I-NH SST39VF040-90-4I-WH Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ...

Page 22

... LEAD HIN MALL UTLINE SST ACKAGE ODE ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SIDE VIEW .106 .112 .023 .020 R. x 30˚ MAX. .029 .013 .021 .026 ...

Page 23

... Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet TOP VIEW CORNER SIDE VIEW SEATING PLANE Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered ...

Page 24

... Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2001 Silicon Storage Technology, Inc. 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 www.SuperFlash.com or www.ssti.com 24 Data Sheet ...

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