AM29F040-90FC Meet Spansion Inc., AM29F040-90FC Datasheet

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AM29F040-90FC

Manufacturer Part Number
AM29F040-90FC
Description
Manufacturer
Meet Spansion Inc.
Datasheet
Am29F040
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
GENERAL DESCRIPTION
The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory
organized as 512 Kbytes of 8 bits each. The Am29F040
is offered in a 32-pin package. This device is designed
to be programmed in-system with the standard system
5.0 V V
write or erase operations. The device can also be
reprogrammed in standard EPROM programmers.
The standard Am29F040 offers access times between
55 ns and 150 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus
contention the device has separate chip enable (CE),
write enable (WE) and output enable (OE) controls.
The Am29F040 is entirely command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state machine
5.0 V
— Minimizes system level power requirements
Compatible with JEDEC-standards
— Pinout and software compatible with single-
— Superior inadvertent write protection
Package options
— 32-pin PLCC
— 32-pin TSOP
— 32-pin PDIP
Minimum 100,000 write/erase cycles guaranteed
High performance
— 55 ns maximum access time
Sector erase architecture
— Uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
Sector protection
— Hardware method that disables any combination
power-supply Flash
Also supports full chip erase.
of sectors from write or erase operations
CC
10% for read and write operations
supply. A 12.0 V V
FINAL
PP
is not required for
which controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from 12.0 Volt Flash or EPROM devices.
The Am29F040 is programmed by executing the pro-
gram command sequence. This will invoke the Embed-
ded Program Algorithm which is an internal algorithm
that automatically times the program pulse widths and
verifies proper cell margin. Typically, each sector can
be programmed and verified in less than one second.
Erase is accomplished by executing the erase com-
mand sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automati-
cally preprograms the array if it is not already pro-
grammed before executing the erase operation. During
erase, the device automatically times the erase pulse
widths and verifies proper cell margin.
Embedded Erase Algorithms
— Automatically preprograms and erases the chip
Embedded Program Algorithms
— Automatically programs and verifies data at
Data Polling and Toggle Bit feature for detection
of program or erase cycle completion
Erase suspend/resume
— Supports reading data from a sector not being
Low power consumption
— 20 mA typical active read current
— 30 mA typical program/erase current
Enhanced power management for standby
mode
— <1 A typical standby current
— Standard access time from standby mode
or any combination of sectors
specified address
erased
Publication# 17113
Issue Date: November 1996
Rev: E Amendment/0

Related parts for AM29F040-90FC

AM29F040-90FC Summary of contents

Page 1

... Hardware method that disables any combination of sectors from write or erase operations GENERAL DESCRIPTION The Am29F040 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered in a 32-pin package. This device is designed to be programmed in-system with the standard system 5 ...

Page 2

... This device also features a sector erase architecture. The sector mode allows for 64K byte blocks of memory to be erased and reprogrammed without affecting other blocks. The Am29F040 is erased when shipped from the factory. The device features single 5.0 V power supply opera- tion for both read and write functions. Internally gener- ated and regulated voltages are provided for the program and erase operations ...

Page 3

... Am29F040 -55 -70 - Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F040 -120 -150 120 150 120 150 50 55 DQ0–DQ7 Input/Output Buffers Data Latch STB Y-Gating Cell Matrix 17113E-2 3 ...

Page 4

... WE A17 A14 A13 A11 A10 DQ7 DQ0 DQ6 DQ5 DQ4 DQ3 17113E-3 TSOP 29F040 Standard Pinout 29F040 Reverse Pinout Am29F040 PLCC A14 6 28 A13 A11 A10 ...

Page 5

... PIN CONFIGURATION A0–A18 = Address Inputs DQ0–DQ7 = Data Input/Output CE = Chip Enable OE = Output Enable WE = Write Enable V = Device Ground Device Power Supply CC (5.0 V 10% or 5%) LOGIC SYMBOL 19 A0–A18 CE (E) OE (G) WE (W) Am29F040 8 DQ0–DQ7 17113E-6 5 ...

Page 6

... DEVICE NUMBER/DESCRIPTION Am29F040 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Valid Combinations AM29F040-55 JC, JI, JE, EC, EI, EE, FC, FI, FE AM29F040-70 AM29F040-90 PC, PCB, PI, PIB, PE, PEB, JC, JCB, JI, JIB, JE, JEB, AM29F040-120 EC, ECB, EI, EIB, EE, EEB, FC, FCB, FI, FIB, P11 AM29F040-150 FE, FEB OPTIONAL PROCESSING Blank = Standard Processing ...

Page 7

... All addresses are don’t cares except A0, A1, and A6. The manufacturer and device codes may also be read via the command register, for instances when the Am29F040 is erased or programmed in a system with- out access to high voltage on the A9 pin. The command sequence is illustrated in Table 4 (refer to Autoselect Command section) ...

Page 8

... See Table 2 for Autoselect codes. Sector Unprotect The Am29F040 also features a sector unprotect mode so that a protected sector may be unprotected to incorporate any changes in the code. The sector unpro- tect is enabled using programming equipment at the user’ ...

Page 9

... Table 4. Am29F040 Command Definitions Bus First Bus Command Write Write Cycle Sequence Cycles Read/Reset Req’d Addr Read/Reset 1 XXXXH Read/Reset 4 5555H Autoselect 4 5555H Byte Program 4 5555H Chip Erase 6 5555H Sector Erase 6 5555H Sector Erase Suspend Erase can be suspended during sector erase with Addr (don’t care), Data (B0H) Sector Erase Resume Erase can be resumed after suspend with Addr (don’ ...

Page 10

... Sector Erase command, only the Erase Suspend and Erase Resume commands are allowed. All other commands will be ignored. Data poll- ing must be performed at an address within any of the sectors being erased. Figure 2 illustrates the Embedded Erase Algorithm using typical command strings and bus operations. Am29F040 ...

Page 11

... Time Limits Embedded Erase Algorithm DQ7 Data Polling The Am29F040 device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the device produces the compliment of the data last written to DQ7 ...

Page 12

... See Figure 12 for the Data Polling timing specifications and diagrams. DQ6 Toggle Bit The Am29F040 also features the “Toggle Bit” method to indicate to the host system that the Embed- ded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm ...

Page 13

... Low V Write Inhibit CC To avoid initiation of a write cycle during V and power-down, the Am29F040 locks out write cycles for V < V (see DC Characteristics section for CC LKO voltages). When V < the command register is CC LKO disabled, all internal program/erase circuits are disabled, and the device resets to the read mode. The ...

Page 14

... EMBEDDED ALGORITHMS Increment Address Program Command Sequence (Address/Command): Figure 1. Embedded Programming Algorithm 14 Start Write Program Command Sequence (see below) Data Poll Device No Last Address ? Yes Programming Completed 5555H/AAH 2AAAH/55H 5555H/A0H Program Address/Program Data Am29F040 17113E-7 ...

Page 15

... Write Erase Command Sequence (see below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence (Address/Command): 5555H/AAH 2AAAH/55H 5555H/AAH 2AAAH/55H Sector Address/30H Sector Address/30H Sector Address/30H Figure 2. Embedded Erase Algorithm Am29F040 5555H/80H Additional sector erase commands are optional 17113E-8 15 ...

Page 16

... Any of the sector addresses within the (DQ0–DQ7) sector being erased during sector erase Addr = VA operation = XXXXH during chip erase Yes DQ7 = Data ? No No DQ5 = 1 ? Yes Read Byte (DQ0–DQ7) Addr = VA Yes DQ7 = Data ? Pass No Fail Figure 3. Data Polling Algorithm Am29F040 17113E-9 ...

Page 17

... Addr = VA No DQ6 = Data ? Pass Yes Fail Figure 5. Toggle Bit Algorithm –2 2 Am29F040 = Any of the sector addresses within the sector being erased during sector erase operation = XXXXH during chip erase 17113E-10 17113E-11 17113E-12 17 ...

Page 18

... Commercial (C) Devices Ambient Temperature (T Industrial (I) Devices Ambient Temperature (T Extended (E) Devices Ambient Temperature (T V Supply Voltages CC V for Am29F040-55 +4. +5. for Am29F040 CC -70, -90, -120, -150 . . . . . . . . . . . . +4. +5.50 V Operating ranges define those limits between which the to –2.0 V functionality of the device is guaranteed 2.0 V for CC to – ...

Page 19

... Max OUT IL IL Max 5. mA Min –2.5 mA Min Am29F040 Min Max Unit 1 1 1.0 mA –0.5 0 10.5 12.5 V 0.45 V 2.4 V 3.2 4 ...

Page 20

... VIH Max 12.0 mA Min –2.5 mA Min 0. –100 Min Am29F040 Min Typ Max Unit 1 1 –0 10.5 12 –0 ...

Page 21

... Min Max Max 55 IL Max 30 Max 18 18 Min 0 5.0 V IN3064 2 Equivalent C L 6.2 k Figure 8. Test Conditions Am29F040 Speed Options (Note 1) -70 -90 -120 -150 Unit 70 90 120 150 120 150 120 150 ...

Page 22

... Min 0 Min 40 Min 25 Min 0 Min 0 Min 0 Min 10 Min 0 Min 0 Min 0 Min 30 Min 20 Typ 7 Typ 1 Max 8 Typ 8 Max 64 Min 50 Am29F040 Speed Options -70 -90 -120 -150 Unit 70 90 120 150 ...

Page 23

... May Will be Change Changing from from Don’t Care, Changing, Any Change State Permitted Unknown Does Not Center Apply Line is High- Impedance “Off” State KS000010-PAL t RC Addresses Stable t ACC Output Valid Am29F040 ( High Z 17113E-14 23 ...

Page 24

... Figure 11. AC Waveforms Chip/Sector Erase Operations 24 Data Polling GHWL t t WHWH1 WP WPH DQ7 Figure 10. Program Operation Timings t AH 2AAAH 5555H t AS 55H 80H Am29F040 OUT t CE 17113E-15 5555H 2AAAH SA AAH 55H 10H/30H 17113E- ...

Page 25

... Embedded operation.) Figure 13. AC Waveforms for Toggle Bit During Embedded Algorithm Operations DQ7 t WHWH DQ0 – DQ6 = Invalid DQ6 = Toggle DQ6 = Toggle t OE Am29F040 High Z DQ7 = Valid Data DQ0 – DQ6 Valid Data 17113E-17 * DQ6 = DQ0– ...

Page 26

... Min 0 Min 40 Min 25 Min 0 Min 0 Min 0 Min 10 Min 0 Min 0 Min 0 Min 30 Min 20 Typ 7 Typ 1 Max 8 Typ 8 Max 64 Min 30 Am29F040 Speed Options -70 -90 -120 -150 Unit 70 90 120 150 ...

Page 27

... DQ7 is the output of the complement of the data written to the device the output of the data written to the device. OUT 5. Figure indicates last two bus cycles of four bus cycle sequence. Figure 14. Alternate CE Controlled Program Operation Timings Data Polling GHEL t WHWH1 CPH t DH A0H PD DQ7 Am29F040 D OUT 17113E-19 27 ...

Page 28

... Excludes system-level overhead (Note 3) , 100,000 cycles 5.0 V, one pin at a time. CC Test Setup OUT Test Setup OUT Am29F040 Comments Min Max –1 1 –100 mA +100 mA Typ Max Unit 6 7 Typ Max Unit 6 7 ...

Page 29

... Control Pin Capacitance IN2 Notes: 1. Sampled, not 100% tested. 2. Test conditions 1.0 MHz. A Test Setup OUT Test Setup OUT Am29F040 Typ Max Unit Typ Max Unit ...

Page 30

... SEATING PLANE .015 .060 .009 .015 .125 .140 .080 .095 SEATING PLANE .013 .021 .050 REF. Am29F040 .600 .625 .008 .015 .630 .700 0° 16-038-SB_AG PD 032 DG75 2-28-95 ae .042 .056 .400 REF. .490 .530 16-038FPO-5 PL 032 DA79 ...

Page 31

... PHYSICAL DIMENSIONS (continued) TS 032 32-Pin Standard Thin Small Outline Package (measured in millimeters) Pin 1 I.D. 1 18.30 18.50 19.80 20.20 1.20 MAX 7.90 8.10 0.08 0.20 0.10 0. 0.50 0.70 Am29F040 0.95 1.05 0.17 0.27 0.50 BSC 0.05 0.15 16-038-TSOP-2 TS 032 DA95 8-14- ...

Page 32

... PHYSICAL DIMENSIONS (continued) TSR032 32-Pin Reversed Thin Small Outline Package (measured in millimeters) Pin 1 I.D. 1 1.20 MAX 32 18.30 18.50 19.80 20. 0.50 0.70 Am29F040 0.95 1.05 0.17 0.27 7.90 8.10 0.50 BSC 0.05 0.15 16-038-TSOP-2 0.08 TSR032 0.20 DA95 0.10 8-15-96 lv 0.21 ...

Page 33

... AC Characteristics Write/Erase/Program Operations (also same table for Alternate CE Controlled Writes): Removed -75 speed option. Changed specifications on t and t . WHWH3 Erase and Programming Performance Changed maximum specifications. Clarified note 5. De- leted Note 2. Am29F040 Supply Voltages , I , and V CC1 CC2 and V ...

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