AM29F100T-70EC Meet Spansion Inc., AM29F100T-70EC Datasheet

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AM29F100T-70EC

Manufacturer Part Number
AM29F100T-70EC
Description
Manufacturer
Meet Spansion Inc.
Datasheet
Am29F100
1 Megabit (128 K x 8-bit/64 K x 16-bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
Single power supply operation
— 5.0 V ± 10% for read, erase, and program operations
— Simplifies system-level power requirements
High performance
— 70 ns maximum access time
Low power consumption
— 20 mA typical active read current for byte mode
— 28 mA typical active read current for word mode
— 30 mA typical program/erase current
— 25 A typical standby current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
— One 8 Kword, two 4 Kword, one 16 Kword, and
— Any combination of sectors can be erased
— Supports full chip erase
Top or bottom boot block configurations available
Sector protection
— Hardware-based feature that disables/re-enables
— Sector protection/unprotection can be
— Temporary Sector Unprotect feature allows in-
one 64 Kbyte sectors (byte mode)
one 32 Kword sectors (word mode)
program and erase operations in any
combination of sectors
implemented using standard PROM
programming equipment
system code changes in protected sectors
FINAL
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
Minimum 100,000 program/erase cycles guaranteed
20-year data retention at 125 C
— Reliable operation for the life of the system
Package options
— 44-pin SO
— 48-pin TSOP
Compatible with JEDEC standards
— Pinout and software compatible with
— Superior inadvertent write protection
Data# Polling and Toggle Bits
— Provides a software method of detecting program
Ready/Busy pin (RY/BY#)
— Provides a hardware method for detecting
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
Hardware RESET# pin
— Hardware method of resetting the device to
pre-programs and erases the chip or any
combination of designated sector
programs and verifies data at specified address
single-power-supply flash
or erase cycle completion
program or erase cycle completion
or program data to, a sector that is not being
erased, then resumes the erase operation
reading array data
Publication# 18926
Issue Date: March 23, 1999
Rev: D Amendment/+1

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AM29F100T-70EC Summary of contents

Page 1

FINAL Am29F100 1 Megabit (128 K x 8-bit/ 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ...

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GENERAL DESCRIPTION The Am29F100 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The ...

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PRODUCT SELECTOR GUIDE Family Part Number Speed Option (V = 5.0 V 10%) CC Max Access Time (ns) CE# Access (ns) OE# Access (ns) Note: See the AC Characteristics section for full specifications. BLOCK DIAGRAM RY/BY# Buffer ...

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CONNECTION DIAGRAMS 1 A15 A14 2 3 A13 A12 4 5 A11 6 A10 WE# 12 RESET RY/BY ...

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CONNECTION DIAGRAMS NC RY/BY CE OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 PIN CONFIGURATION A0–A15 = 16 Addresses DQ0–DQ14 = 15 Data Inputs/Outputs DQ15/A-1 = DQ15 (Data ...

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... Megabit (128 K x 8-Bit/ 16-Bit) CMOS Flash Memory 5.0 Volt-only Read, Program and Erase Valid Combinations AM29F100T-70, AM29F100B-70 AM29F100T-90, EC, EI, EE, AM29F100B-90 FC, FI, FE, AM29F100T-120, AM29F100B-120 AM29F100T-150, AM29F100B-150 6 B OPTIONAL PROCESSING Blank = Standard Processing B = Burn-In (Contact an AMD representative for more information) TEMPERATURE RANGE ...

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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches ...

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Refer to “Word/Byte Configuration” for more information. An erase operation can erase one sector, multiple sec- tors, or the entire device. The Sector Address Tables indicate the address space that each sector occupies. A “sector address” consists of the ...

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... Table 2. Sector Addresses Tables (Am29F100T) A15 A14 SA0 0 X SA1 1 0 SA2 1 1 SA3 1 1 SA4 1 1 Table 3. Sector Addresses Tables (Am29F100B) A15 A14 SA0 0 0 SA1 0 0 SA2 0 0 SA3 0 1 SA4 1 X Autoselect Mode The autoselect mode provides manufacturer and de- vice identification, and sector protection verification, through identifier codes output on DQ7– ...

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Table 4. Am29F100 Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: Word L Am29F100 Byte L (Top Boot Block) Device ID: Word L Am29F100 Byte L (Bottom Boot Block) Sector Protection Verification L L ...

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Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to the Command Defi- nitions table). In addition, the following hardware data protection measures prevent accidental erasure or pro- ...

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Autoselect Codes (High Voltage Method) table, which is intended for PROM program- mers and requires V on address bit A9. ID The autoselect command sequence is initiated by writ- ing two unlock cycles, followed by the ...

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Chip Erase Command Sequence Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, ...

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After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected ...

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Table 5. Am29F100 Command Definitions Command Sequence (Note 1) Read (Note 5) 1 Reset (Note 6) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot Block Byte Word Sector ...

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WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a write operation: DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections de- scribe the functions of these bits. DQ7, RY/BY#, and DQ6 ...

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RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

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DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If addi- ...

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Operation Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Reading within Erase Suspended Sector Erase Suspend Reading within Non-Erase Suspended Mode Sector Erase-Suspend-Program Notes: 1. DQ7 requires a valid address when reading status information. Refer to the appropriate subsection for ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . – +125 C Ambient Temperature with Power Applied . . . . . . . . ...

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DC CHARACTERISTICS TTL/NMOS Compatible Parameter Symbol Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current Active Current (Notes 1, 2) CC1 Active Current (Notes 2, 3, ...

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DC CHARACTERISTICS (continued) CMOS Compatible Parameter Symbol Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current Active Current (Notes CC1 CC V Active Current ...

Page 23

TEST CONDITIONS Device Under Test C L 6.2 k Note: Diodes are IN3064 or equivalent Figure 8. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted Table 7. Test Specifications 5.0 V Test Condition Output Load 2.7 ...

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AC CHARACTERISTICS Read-only Operations Characteristics Parameter Symbol JEDEC Std Parameter Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output ...

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AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded t READY Algorithms) to Read or Write (See Note) RESET# Pin Low (NOT During Embedded t READY Algorithms) to Read or Write (See Note) t RESET# ...

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AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std Description t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...

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AC CHARACTERISTICS Erase and Program Operations Parameter Symbol JEDEC Std t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH DS ...

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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# t GHWL OE# WE Data RY/BY# t VCS V CC Notes program address program data Illustration shows device ...

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AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE# t GHWL OE# WE Data RY/BY# t VCS V CC Notes sector address (for Sector Erase Valid Address for reading ...

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AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read ...

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AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std Description t V Rise and Fall Time (See Note) VIDR ID RESET# Setup Time for Temporary Sector t RSP Unprotect Note: Not 100% tested RESET ...

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AC CHARACTERISTICS Erase and Program Operations Alternate CE# Controlled Writes Parameter Symbol JEDEC Std t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data ...

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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes Program Address Program Data Sector Address, DQ7# = Complement ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Chip/Sector Erase Time Byte Programming Time Word Programming Time Chip Programming Time (Note 3) Notes: 1. Typical program and erase times assume the following conditions 5 programming typicals assume checkerboard pattern. ...

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PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package (measured in millimeters 1.27 NOM. TOP VIEW 28.00 28.40 2.17 2.45 0.35 0.50 SIDE VIEW 23 13.10 15.70 13.50 16.30 22 2.80 MAX. SEATING PLANE 0.10 0.35 Am29F100 0.10 0.21 0 ...

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PHYSICAL DIMENSIONS TS 048—48-Pin Standard Thin Small Outline Package (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC TSR048—48-Pin Reverse Thin Small Outline Package (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") ...

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REVISION SUMMARY Revision D Distinctive Characteristics Added: 20-year data retention at 125 C — Reliable operation for the life of the system DC Characteristics—TTL/NMOS Compatible Deleted CC1 CC2 CC3 CC CC ...

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