AM29F200AT-70EC Meet Spansion Inc., AM29F200AT-70EC Datasheet

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AM29F200AT-70EC

Manufacturer Part Number
AM29F200AT-70EC
Description
Manufacturer
Meet Spansion Inc.
Datasheet

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Am29F200A
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
5.0 V
— Minimizes system level power requirements
High performance
— Access times as fast as 55 ns
Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
— 30 mA typical program/erase current
— 1 A typical standby current
Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
— One 8 Kword, two 4 Kword, one 16 Kword, and
— Supports full chip erase
— Sector Protection features:
(word mode)
three 64 Kbyte sectors (byte mode)
three 32 Kword sectors (word mode)
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
PRELIMINARY
10% for read and write operations
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
Minimum 100,000 write/erase cycles guaranteed
Package options
— 44-pin SO
— 48-pin TSOP
Compatible with JEDEC standards
— Pinout and software compatible with
— Superior inadvertent write protection
Data# Polling and Toggle Bit
— Detects program or erase cycle completion
Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
Erase Suspend/Erase Resume
— Supports reading data from a sector not being
Hardware RESET# pin
— Resets internal state machine to the reading
preprograms and erases the entire chip or any
combination of designated sectors
writes and verifies data at specified addresses
single-power-supply flash
erase cycle completion
erased
array data
Publication# 20637
Issue Date: January 3, 2000
Rev: B Amendment/+4

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AM29F200AT-70EC Summary of contents

Page 1

PRELIMINARY Am29F200A 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS 5.0 V 10% for read and write operations — Minimizes system level power requirements High performance — Access times as ...

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GENERAL DESCRIPTION The Am29F200A Mbit, 5.0 Volt-only Flash mem- ory organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0–DQ7; the 16 bits on DQ0– DQ15. The Am29F200A is offered in 44-pin ...

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PRODUCT SELECTOR GUIDE Family Part Number Speed Option V = 5.0 V 10% CC Max access time ACC Max CE# access time Max OE# access time, ns ...

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CONNECTION DIAGRAMS NC RY/BY CE OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 ...

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CONNECTION DIAGRAMS 1 A15 2 A14 3 A13 A12 4 A11 5 6 A10 WE RESET RY/BY ...

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PIN CONFIGURATION A0–A16 = 17 addresses DQ0–DQ14 = 15 data inputs/outputs DQ15/A-1 = DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) BYTE# = Selects 8-bit or 16-bit mode CE# = Chip enable OE# = Output enable WE# ...

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... Am29F200A T -55 Valid Combinations AM29F200AT-55, EC, EI, FC, FI, SC, SI AM29F200AB-55 AM29F200AT-70, AM29F200AB-70 AM29F200AT-90, AM29F200AB-90 AM29F200AT-120, AM29F200AB-120, AM29F200AT-150, AM29F200AB-150 OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial (0°C to +70°C) ...

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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register it- self does not occupy any addressable memory loca- tion. The register is composed ...

Page 9

An erase operation can erase one sector, multiple sec- tors, or the entire device. The Sector Address Tables in- dicate the address space that each sector occupies. A “sector address” consists of the address bits required to uniquely select a ...

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Table 2. Am29F200T Top Boot Block Sector Address Table Sector A16 A15 A14 SA0 SA1 SA2 SA3 SA4 SA5 SA6 1 1 ...

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Table 4. Am29F200A Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: Word L Am29F200A Byte L (Top Boot Block) Device ID: Word L Am29F200A Byte L (Bottom Boot Block) Sector Protection Verification L L ...

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V power-down transitions, or from system noise. Low V Write Inhibit CC When V is less than V , the device does not ac- CC LKO cept ...

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Method) table, which is intended for PROM program- mers and requires V on address bit A9. ID The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, ...

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The system can determine the status of the erase operation by using DQ7, DQ6, or RY/BY#. See “Write Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data ...

Page 15

When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. See “Autoselect Command Sequence” for more information. The system must ...

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Table 5. Am29F200A Command Definitions Command Sequence (Note 1) Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot Block Byte Word Sector ...

Page 17

WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a write operation: DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 9 and the following subsections de- scribe the functions of these bits. DQ7, RY/BY#, and DQ6 ...

Page 18

RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

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See also the “Sector Erase Command Se- quence” section. After the sector erase command sequence is written, the system ...

Page 20

Operation Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Reading within Erase Suspended Sector Erase Suspend Reading within Non-Erase Suspended Mode Sector Erase-Suspend-Program Notes: 1. DQ7 requires a valid address when reading status information. Refer to the appropriate subsection for ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . – +150 C Ambient Temperature with Power Applied ...

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DC CHARACTERISTICS TTL/NMOS Compatible Parameter Symbol Parameter Description I Input Load Current A9 RESET Input Load I LIT Current I Output Leakage Current Active Read Current (Note 1) CC1 CC V Active ...

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DC CHARACTERISTICS (continued) CMOS Compatible Parameter Symbol Parameter Description I Input Load Current A9 RESET Input I LIT Load Current I Output Leakage Current LO V Active Read Current CC I CC1 (Note 1) V ...

Page 24

TEST CONDITIONS Device Under Test C L 6.2 k Note: Diodes are IN3064 or equivalents. Figure 8. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted ...

Page 25

AC CHARACTERISTICS Read Operations Parameter JEDEC Std Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV CE Output Enable to Output Delay t ...

Page 26

AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded t READY Algorithms) to Read or Write (See Note) RESET# Pin Low (NOT During Embedded t READY Algorithms) to Read or Write (See Note) t RESET# ...

Page 27

AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std. Description t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...

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AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH ...

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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# t GHWL OE# WE Data RY/BY# t VCS V CC Notes program address program data Illustration shows device ...

Page 30

AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE# t GHWL OE WE Data RY/BY# t VCS V CC Notes sector address (for Sector Erase Valid ...

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AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid Address. Illustration shows first status cycle after command sequence, last status read ...

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AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std. Description t V Rise and Fall Time (See Note) VIDR ID RESET# Setup Time for Temporary Sector t RSP Unprotect Note: Not 100% tested RESET ...

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AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH ...

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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes Program Address Program Data Sector Address, DQ7# = Complement ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time (Note 3) Notes: 1. Typical program and erase times assume the following conditions 5 programming typicals ...

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PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package (measured in millimeters 1.27 NOM. TOP VIEW 28.00 28.40 2.17 2.45 0.35 0.50 SIDE VIEW 13.10 15.70 13.50 ...

Page 37

PHYSICAL DIMENSIONS TS 048—48-Pin Standard Thin Small Outline Package (measured in millimeters) Pin 1 I. 18.30 18.50 19.80 20.20 1.20 MAX 0.25MM (0.0098") BSC 0.08 ...

Page 38

PHYSICAL DIMENSIONS TSR048—48-Pin Reverse Thin Small Outline Package (measured in millimeters) Pin 1 I. 18.30 18.50 19.80 20.20 1.20 MAX 0.25MM (0.0098") BSC 0.08 ...

Page 39

REVISION SUMMARY Revision B (January 1998) Global: Made formatting and layout consistent with other data sheets. Used updated common tables and diagrams Revision B+1 (January 1998) Minor formatting changes only. Revision B+2 (February 1998) Connection Diagrams Swapped standard and reversed ...

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