AM29F200BT-70SC Meet Spansion Inc., AM29F200BT-70SC Datasheet

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AM29F200BT-70SC

Manufacturer Part Number
AM29F200BT-70SC
Description
Manufacturer
Meet Spansion Inc.
Datasheet

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AM29F200BT-70SC
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Part Number:
AM29F200BT-70SC
Manufacturer:
AMD
Quantity:
6 700
Am29F200B
Data Sheet
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 21526
Revision D
Amendment 4
Issue Date Nobember 1, 2006

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AM29F200BT-70SC Summary of contents

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Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are ...

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DATA SHEET Am29F200B 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm ...

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GENERAL DESCRIPTION The Am29F200B Mbit, 5.0 Volt-only Flash memory organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0–DQ7; the 16 bits on DQ0–DQ15. The Am29F200B is offered in 44-pin SO and ...

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TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4 Block Diagram . . . . . . . . . . ...

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PRODUCT SELECTOR GUIDE Family Part Number = 5.0 V ± Speed Option = 5.0 V ± 10 Max access time ACC Max CE# access time Max OE# access ...

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CONNECTION DIAGRAMS This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for more information. NC RY/BY CE OE# DQ0 DQ8 DQ1 DQ9 ...

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CONNECTION DIAGRAMS This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for more information. 1 A15 2 A14 3 A13 A12 4 5 A11 6 A10 ...

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... Volt-only Program and Erase Valid Combinations EC, EI, SC, SI AM29F200BT-45, AM29F200BB-45 ED, EF, SD, SF AM29F200BT-50, AM29F200BB-50 AM29F200BT-55, AM29F200BB-55 AM29F200BT-70, EC, EI, EE, ED, EF, EK AM29F200BB-70 SC, SI, SE, SD, SF, SK AM29F200BT-90, AM29F200BB-90 AM29F200BT-120, AM29F200BB-120 November 1, 2006 21526D4 TEMPERATURE RANGE ° ° + ...

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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory loca- tion. The register is composed of ...

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An erase operation can erase one sector, multiple sec- tors, or the entire device. The Sector Address Tables indicate the address space that each sector occupies. A “sector address” consists of the address bits required to uniquely select a sector. ...

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Table 2. Am29F200T Top Boot Block Sector Address Table Sector A16 A15 A14 SA0 SA1 SA2 SA3 SA4 SA5 SA6 1 1 ...

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Table 4. Am29F200B Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: Word L Am29F200B Byte L (Top Boot Block) Device ID: Word L Am29F200B Byte L (Bottom Boot Block) Sector Protection Verification L L ...

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V power-down transitions, or from system noise. Low V Write Inhibit CC When V is less than V , the device does not CC LKO accept any write ...

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Method) table, which is intended for PROM program- mers and requires V on address bit A9. ID The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, ...

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The system can determine the status of the erase oper- ation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading ...

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The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ...

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Command Definitions Table 5. Am29F200B Command Definitions Command Sequence (Note 1) Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot Block Byte ...

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WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsec- tions describe the functions of these bits. DQ7, RY/BY#, and DQ6 ...

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RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

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The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor ...

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Operation Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Reading within Erase Suspended Sector Erase Suspend Reading within Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied ...

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DC CHARACTERISTICS TTL/NMOS Compatible Parameter Symbol Parameter Description I Input Load Current A9 RESET Input Load I LIT Current I Output Leakage Current Active Read Current (Notes CC1 CC ...

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DC CHARACTERISTICS (Continued) CMOS Compatible Parameter Symbol Parameter Description I Input Load Current A9 RESET Input I LIT Load Current I Output Leakage Current LO V Active Read Current CC I CC1 (Notes 1, 2) ...

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TEST CONDITIONS Device Under Test C L 6.2 kΩ Note: Diodes are IN3064 or equivalents. Figure 8. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted Table ...

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AC CHARACTERISTICS Read Operations Parameter JEDEC Std Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV CE Output Enable to Output Delay t ...

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AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded t READY Algorithms) to Read or Write (See Note) RESET# Pin Low (NOT During Embedded t READY Algorithms) to Read or Write (See Note) t RESET# ...

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AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std Description t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...

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AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH ...

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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY# t VCS V CC Notes program address program data Illustration shows device in word ...

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AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE Data RY/BY# t VCS V CC Notes sector address (for Sector Erase Valid Address for ...

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AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read ...

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AC CHARACTERISTICS Enter Erase Embedded Suspend Erasing Erase Erase Suspend WE# DQ6 DQ2 Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the erase-sus- pended sector. Temporary ...

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AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH ...

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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes Program Address Program Data Sector Address, DQ7# = Complement ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time (Note 3) Notes: 1. Typical program and erase times assume the following conditions: 25×C, 5 programming typicals assume ...

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PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package Am29F200B Dwg rev AC; 10/99 21526D4 November 1, 2006 ...

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PHYSICAL DIMENSIONS TS 048—48-Pin Standard Thin Small Outline Package November 1, 2006 21526D4 Am29F200B Dwg rev AA; 10/99 37 ...

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REVISION SUMMARY Revision A (July 1998) Global Made formatting and layout consistent with other data sheets. Used updated common tables and diagrams Revision B (January 1999) Distinctive Characteristics Added bullet for 20-year data retention at 125°C Ordering Information Optional Processing: ...

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The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita- tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con- ...

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