CED13N07 Chino-Excel Technology Corp, CED13N07 Datasheet

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CED13N07

Manufacturer Part Number
CED13N07
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CED13N07
Manufacturer:
SANKEN
Quantity:
9 000
FEATURES
ABSOLUTE MAXIMUM RATINGS
2005.March
N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
70V, 11A, R
Super high dense cell design for extremely low R
TO-251 & TO-252 package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
R
DS(ON)
DS(ON)
= 127m
= 153m
Parameter
Parameter
a
- Derate above 25 C
CEU SERIES
TO-252(D-PAK)
G
S
@V
@V
d
C
d
GS
GS
= 25 C
= 10V.
= 5V.
D
CED13N07/CEU13N07
DS(ON)
CED SERIES
TO-251(I-PAK)
T c = 25 C unless otherwise noted
6 - 26
.
Symbol
Symbol
T
R
R
V
V
E
J
I
P
I
I
DM
,T
AS
DS
GS
AS
D
D
JC
JA
stg
G
-55 to 150
Limit
Limit
0.22
4.5
70
20
11
44
28
70
10
50
D
http://www.cetsemi.com
S
Units
Units
W/ C
C/W
C/W
mJ
W
V
V
A
A
A
C

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CED13N07 Summary of contents

Page 1

... Maximum Power Dissipation @ T - Derate above 25 C Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2005.March CED13N07/CEU13N07 = 10V 5V DS(ON) D CED SERIES TO-251(I-PAK unless otherwise noted ...

Page 2

... Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 870 10A 25V Starting CED13N07/CEU13N07 unless otherwise noted Symbol Test Condition 0V 250 µ A DSS GS D ...

Page 3

... V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CED13N07/CEU13N07 2.6 2.2 1.8 1.4 1.0 0.6 0 125 150 =125 C - ...

Page 4

... GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve CED13N07/CEU13N07 DS(ON = =150 C J Single Pulse - Figure 8. Maximum Safe ...

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