CED02N7 Chino-Excel Technology Corp, CED02N7 Datasheet

no-image

CED02N7

Manufacturer Part Number
CED02N7
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet
FEATURES
ABSOLUTE MAXIMUM RATINGS
2004.October
N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
700V, 1.6A, R
Super high dense cell design for extremely low R
TO-251 & TO-252 package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Single Pulsed Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
DS(ON)
Parameter
Parameter
= 6.6
a
- Derate above 25 C
CEU SERIES
TO-252(D-PAK)
G
a
@V
a
S
d
GS
C
= 25 C
= 10V.
D
DS(ON)
CED SERIES
TO-251(I-PAK)
T c = 25 C unless otherwise noted
CED02N7/CEU02N7
6 - 10
.
Symbol
Symbol
T
R
R
V
V
E
E
J
I
I
P
I
DM
,T
AR
DS
GS
AR
D
AS
D
JC
JA
stg
G
-55 to 150
Limit
Limit
0.34
700
125
1.6
5.4
2.9
43
50
6
2
30
D
http://www.cetsemi.com
S
Units
Units
W/ C
C/W
C/W
mJ
mJ
W
V
V
A
A
A
C

Related parts for CED02N7

CED02N7 Summary of contents

Page 1

... Single Pulsed Avalanche Energy a Repetitive Avalanche Current a Repetitive Avalanche Energy Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2004.October CED02N7/CEU02N7 = 10V DS(ON) D CED SERIES TO-251(I-PAK unless otherwise noted Symbol V DS ...

Page 2

... Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 60mH 2.0A 50V Starting CED02N7/CEU02N7 unless otherwise noted Symbol Test Condition 0V 250 µ A DSS GS D ...

Page 3

... Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CED02N7/CEU02N7 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 -100 125 150 Figure 6. Body Diode Forward Voltage =150 C J -55 C 1.V ...

Page 4

... GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 -1 0.1 10 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve CED02N7/CEU02N7 DS(ON = =150 C J Single Pulse - ...

Related keywords