CEB10N4 Chino-Excel Technology Corp, CEB10N4 Datasheet

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CEB10N4

Manufacturer Part Number
CEB10N4
Description
Manufacturer
Chino-Excel Technology Corp
Datasheet
FEATURES
ABSOLUTE MAXIMUM RATINGS
2002.September
N-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
Super high dense cell design for extremely low R
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
CEB SERIES
TO-263(DD-PAK)
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
CEP10N4
CEB10N4
CEI10N4
CEF10N4
Type
450V
450V
450V
450V
V
DSS
Parameter
Parameter
CEI SERIES
TO-262(I2-PAK)
a
- Derate above 25 C
R
0.7
0.7
0.7
0.7
DS(ON)
d
C
d
= 25 C
10A
10A
10A
10A
I
CEP SERIES
TO-220
D
e
@V
DS(ON)
10V
10V
10V
10V
T c = 25 C unless otherwise noted
GS
CEP10N4/CEB10N4
4 - 50
.
CEI10N4/CEF10N4
Symbol
Symbol
T
R
CEF SERIES
TO-220F
I
R
V
V
E
J
DM
P
I
I
,T
AS
DS
GS
D
AS
D
JC
JA
stg
f
TO-220/263/262
G
62.5
125
450
1.0
1.0
10
40
10
-55 to 150
Limit
Limit
450
30
TO-220F
http://www.cetsemi.com
0.36
450
2.8
10
40
45
10
65
D
S
e
e
Units
Units
W/ C
C/W
C/W
mJ
W
V
V
A
A
A
C

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CEB10N4 Summary of contents

Page 1

... Drain Current-Pulsed Maximum Power Dissipation @ T - Derate above 25 C Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2002.September CEP10N4/CEB10N4 CEI10N4/CEF10N4 10A 10V 10A 10V 10A ...

Page 2

... I = 10A 50V Starting e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package I = 5.6A . S(max) CEP10N4/CEB10N4 CEI10N4/CEF10N4 unless otherwise noted Symbol Test Condition 0V 250 µ A DSS ...

Page 3

... V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance 1 =250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - 100 T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature CEP10N4/CEB10N4 CEI10N4/CEF10N4 2.2 1.9 1.6 1.3 1.0 0.7 0 125 150 - =125 ...

Page 4

... GS R GEN G S Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0 0.05 0.02 0.01 Single Pulse - Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve CEP10N4/CEB10N4 CEI10N4/CEF10N4 DS(ON = =150 C J Single Pulse - ...

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