AO4600 Alpha & Omega Semiconductors, AO4600 Datasheet

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AO4600

Manufacturer Part Number
AO4600
Description
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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AO4600
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AO/pb-free
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Part Number:
AO4600
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AOS/ 万代
Quantity:
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Part Number:
AO4600A/
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Part Number:
AO4600CL
Quantity:
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Part Number:
AO4600L
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AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4600
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4600 uses advanced trench technology to
provide excellent R
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS
& Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are
electrically identical.
S2
G2
S1
G1
A
SOIC-8
1
2
3
4
8
7
6
5
DS(ON)
D2
D2
D1
D1
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and low gate charge. The
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
n-channel
G2
Symbol
Features
n-channel
V
I
R
< 27mΩ
< 32mΩ
< 50mΩ
R
R
D
Max n-channel
DS
DS(ON)
θJA
θJL
= 6.9A
-55 to 150
D2
S2
(V) = 30V
1.44
±12
6.9
5.8
30
40
2
(V
GS
Typ
48
74
35
= 10V)
p-channel
G1
< 49mΩ (V
< 64mΩ (V
< 120mΩ (V
p-channel
-5A
-30V
Max p-channel
Max
62.5
110
D1
S1
-55 to 150
40
(V
GS
1.44
±12
-4.2
-30
-30
GS
GS
-5
2
= -10V)
GS
=- 10V)
=- 4.5V)
= -2.5V)
Units
°C/W
°C/W
°C/W
Units
°C
W
V
V
A

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AO4600 Summary of contents

Page 1

... The AO4600 uses advanced trench technology to provide excellent R and low gate charge. The DS(ON) complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green Product ordering option. AO4600 and AO4600L are electrically identical ...

Page 2

... AO4600 n-channel MOSFET Electrical Characteristics (T Parameter Symbol STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 3

... AO4600 TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 3V 25 4. (Volts) DS Fig 1: On-Region Characteristics 60 V =2. (Amps) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 4

... AO4600 TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =6. (nC) g Figure 7: Gate-Charge characteristics 100.0 R DS(ON) limited 1ms 10.0 10ms 0.1s 1.0 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =62.5°C/W θ ...

Page 5

... AO4600 p-channel MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 6

... AO4600 TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V -4. (Volts) DS Fig 1: On-Region Characteristics 120 100 V =-2. Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 130 110 25° (Volts) GS Figure 5: On-Resistance vs ...

Page 7

... AO4600 TYPICAL P-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited 0.1s 1s 1.0 10s 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

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