AO4606 Alpha & Omega Semiconductors, AO4606 Datasheet

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AO4606

Manufacturer Part Number
AO4606
Description
Manufacturer
Alpha & Omega Semiconductors
Datasheet

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Part Number:
AO4606
Manufacturer:
AOS
Quantity:
300
Part Number:
AO4606
Manufacturer:
AOS/万代
Quantity:
20 000
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AO4606
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Part Number:
AO4606/4606
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KF科范微半导体/蓝箭
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AO4606/BRCS4606SC
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蓝箭
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AO4606A/
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AO
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Part Number:
AO4606L
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AOS
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8 000
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AO4606L
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AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4606
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4606 uses advanced trench
technology MOSFETs to provide excellent
R
complementary MOSFETs may be used
to form a level shifted high side switch,
and for a host of other applications.
DS(ON)
S2
G2
S1
G1
A
and low gate charge. The
SOIC-8
1
2
3
4
8
7
6
5
D2
D2
D1
D1
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
C
C
A
A
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
Features
n-channel
V
I
R
< 28mΩ (V
< 42mΩ (V
, T
D
DS
DS(ON)
= 6.9A
STG
(V) = 30V
n-channel
G2
Symbol
GS
GS
Max n-channel
R
R
R
R
=10V)
=4.5V)
θJA
θJL
θJA
θJL
-55 to 150
D2
S2
1.44
±20
6.9
5.8
30
30
2
R
Device
-6A
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
-30V
DS(ON)
p-channel
< 35mΩ (V
< 58mΩ (V
p-channel
G1
Max p-channel
Typ
D1
S1
GS
GS
-55 to 150
48
74
35
48
74
35
= 10V)
= 4.5V)
1.44
±20
-30
-30
-6
-5
2
Feb 2003
Max Units
62.5
62.5
110
110
60
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4606 Summary of contents

Page 1

... AO4606 Complementary Enhancement Mode Field Effect Transistor General Description The AO4606 uses advanced trench technology MOSFETs to provide excellent R and low gate charge. The DS(ON) complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications ...

Page 2

... AO4606 N-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 3

... AO4606 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 4

... AO4606 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 4. (Volts) DS Fig 1: On-Region Characteristics =4. (Amps) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 5

... AO4606 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =6. (nC) g Figure 7: Gate-Charge characteristics 100 R DS(ON) limited 1ms 10 10ms 0.1s 1 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =62.5°C/W θ ...

Page 6

... AO4606 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -4.5V -10V - (Volts) DS Fig 1: On-Region Characteristics =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° ...

Page 7

... AO4606 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

Page 8

... LOGO - AOS LOGO 4606 - PART NUMBER CODE. LOGO FAB LOCATION A - ASSEMBLY LOCATION YEAR CODE W - WEEK CODE ASSEMBLY LOT CODE SO-8 PART NO. CODE PART NO. CODE AO4606 4606 SO-8 Package Data DIMENSIONS IN MILLIMETERS SYMBOLS MIN NOM MAX MIN A 1.45 1.50 1.55 0.057 A1 0.00 0.10 0.000 A2 1 ...

Page 9

ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data ...

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