KM44C4104CK-6 Samsung, KM44C4104CK-6 Datasheet
KM44C4104CK-6
Specifications of KM44C4104CK-6
Related parts for KM44C4104CK-6
KM44C4104CK-6 Summary of contents
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... All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consump- tion and high reliability. It may be used as main memory unit for high level computer, microcomputer and personal computer. ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C •KM44C/V40(1)04CK DQ0 2 DQ1 RAS 5 *A11(N.C) 6 A10 *A11 is N.C for KM44C/V4104C(5V/3.3V, 2K Ref. product) K ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 Normal I Don t care CC2 L I Don t care CC3 I Don t care CC4 Normal I Don t care CC5 L I ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, CAS, W, OE] Output capacitance [DQ0 - DQ3] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (2K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C NOTES 1. An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved (min) and V (max) are reference levels ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C READ CYCLE RAS CAS ASR ADDRESS ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS V ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ADDRESS ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C READ - MODIFY - WRITE CYCLE RAS CRP CAS ASR ROW A ADDR ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C HYPER PAGE READ CYCLE RAS CRP CAS ASR RAH ROW A ADDR ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C HYPER PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR RAH V - ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C HYPER PAGE READ-MODIFY-WRITE CYCLE RAS CRP CAS RAD t ASR t ASC ROW A ADDR ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C HYPER PAGE READ AND WRITE MIXED CYCLE RAS CAS t RAD RAH t ASR ROW A ADDR ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C RAS - ONLY REFRESH CYCLE* NOTE : W, OE Don t care OPEN OUT RAS CRP CAS ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C HIDDEN REFRESH CYCLE ( READ ) RAS CRP CAS ASR ADDRESS ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CAS ASR ADDRESS V - ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE Don t care RAS CAS DQ0 ~ DQ3(7) t CEZ ...
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KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C PACKAGE DIMENSION 26(24) SOJ 300mil #26(24) 0.0375 (0.95) 26(24) TSOP(II) 300mil 0.037 (0.95) 0.691 (17.55) MAX 0.670 (17.03) 0.680 (17.28) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.691 (17.54) MAX 0.671 (17.04) 0.047 ...