ATtiny85 Atmel Corporation, ATtiny85 Datasheet - Page 160

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ATtiny85

Manufacturer Part Number
ATtiny85
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATtiny85

Flash (kbytes)
8 Kbytes
Pin Count
8
Max. Operating Frequency
20 MHz
Cpu
8-bit AVR
# Of Touch Channels
3
Hardware Qtouch Acquisition
No
Max I/o Pins
6
Ext Interrupts
6
Usb Speed
No
Usb Interface
No
Spi
1
Twi (i2c)
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
4
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
Yes
Crypto Engine
No
Sram (kbytes)
0.5
Eeprom (bytes)
512
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8 to 5.5
Operating Voltage (vcc)
1.8 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
2
Output Compare Channels
5
Pwm Channels
6
32khz Rtc
No
Calibrated Rc Oscillator
Yes

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20.7.1
20.7.2
160
ATtiny25/45/85
Enter High-voltage Serial Programming Mode
Considerations for Efficient Programming
The following algorithm puts the device in High-voltage Serial Programming mode:
If the rise time of the V
tive algorithm can be used:
Table 20-15. High-voltage Reset Characteristics
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
Supply Voltage
V
4.5V
5.5V
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.
4. Keep the Prog_enable pins unchanged for at least 10 µs after the High-voltage has
5. Release the Prog_enable[2] pin to avoid drive contention on the Prog_enable[2]/SDO
6. Wait at least 300 µs before giving any serial instructions on SDI/SII.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Monitor V
4. Keep the Prog_enable pins unchanged for at least 10 µs after the High-voltage has
5. Release the Prog_enable[2] pin to avoid drive contention on the Prog_enable[2]/SDO
6. Wait until V
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the
• Address High byte needs only be loaded before programming or reading a new 256 word
CC
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
the next 20 µs.
been applied to ensure the Prog_enable Signature has been latched.
pin.
been applied to ensure the Prog_enable Signature has been latched.
pin.
SDI/SII.
CC
CC
, and as soon as V
actually reaches 4.5 - 5.5V before giving any serial instructions on
RESET Pin High-voltage Threshold
CC
is unable to fulfill the requirements listed above, the following alterna-
CC
CC
V
and GND. Ensure that V
and GND.
Table 20-14
Table 20-14
11.5V
11.5V
CC
HVRST
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
to “000”, RESET pin and V
to “000”, RESET pin and V
CC
Minimum High-voltage Period for
reaches at least 1.8V within
Latching Prog_enable
t
100 ns
100 ns
HVRST
CC
CC
to 0V.
to 0V.
2586N–AVR–04/11

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