SAM3S4B Atmel Corporation, SAM3S4B Datasheet - Page 298

• Manufacturer Part Number: SAM3S4B
• Manufacturer: Atmel Corporation

Specifications of SAM3S4B

• Flash (kbytes): 256 Kbytes
• Pin Count: 64
• Max. Operating Frequency: 64 MHz
• Cpu: Cortex-M3
• # Of Touch Channels: 23
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 79
• Ext Interrupts: 79
• Usb Transceiver: 1
• Quadrature Decoder Channels: 1
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 3
• Twi (i2c): 2
• Uart: 4
• Ssc: 1
• Sd / Emmc: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 10
• Adc Resolution (bits): 12
• Adc Speed (ksps): 1000
• Analog Comparators: 1
• Resistive Touch Screen: No
• Dac Channels: 2
• Dac Resolution (bits): 12
• Temp. Sensor: Yes
• Crypto Engine: No
• Sram (kbytes): 48
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: Yes
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8/3.3
• Operating Voltage (vcc): 1.62 to 3.6
• Fpu: No
• Mpu / Mmu: Yes / No
• Timers: 3
• Output Compare Channels: 3
• Input Capture Channels: 3
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

Figure 18-6. Example of Partial Page Programming
18.3.3.3
18.3.3.4
298
X words
X words
X words
X words
SAM3S
Erase Commands
Lock Bit Protection
So Page Y erased
Erase All Flash
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
32-bit wide
Step 1.
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
...
...
...
...
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
Two errors can be detected in the EEFC_FSR register after a programming sequence:
By using the WP command, a page can be programmed in several steps if it has been erased
before (see
The Partial Programming mode works only with 128-bit (or higher) boundaries. It cannot be used
with boundaries lower than 128 bits (8, 16 or 32-bit for example).
Erase commands are allowed only on unlocked regions.
The erase sequence is:
Two errors can be detected in the EEFC_FSR register after a programming sequence:
Lock bits are associated with several pages in the embedded Flash memory plane. This defines
lock regions in the embedded Flash memory plane. They prevent writing/erasing protected
pages.
• a Command Error: a bad keyword has been written in the EEFC_FCR register.
• a Lock Error: the page to be programmed belongs to a locked region. A command must be
• Erase starts as soon as one of the erase commands and the FARG field are written in the
• When the programming completes, the FRDY bit in the Flash Programming Status Register
• a Command Error: a bad keyword has been written in the EEFC_FCR register.
• a Lock Error: at least one page to be erased belongs to a locked region. The erase command
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
previously run to unlock the corresponding region.
Flash Command Register.
(EEFC_FSR) rises. If an interrupt has been enabled by setting the FRDY bit in EEFC_FMR,
the interrupt line of the NVIC is activated.
has been refused, no page has been erased. A command must be run previously to unlock
the corresponding region.
Figure
Programming of the second part of Page Y
18-6).
FF
FF
FF
CA FE
CA FE
CA FE
FF
FF
FF
FF
FF
FF
32-bit wide
FF
FF
FF
Step 2.
FF
FF
FF
FF
FF
FF
...
...
...
...
FF
FF
FF
CA
CA
CA
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FE
FE
FE
Programming of the third part of Page Y
FF
FF
FF
CA FE
CA FE
CA FE
DE CA
DE CA
DE CA
FF
FF
FF
32-bit wide
FF
FF
FF
FF
FF
FF
Step 3.
...
...
...
...
FF
FF
FF
CA
CA
CA
DE CA
DE CA
DE CA
FF
FF
FF
6500C–ATARM–8-Feb-11
FF
FF
FF
FE
FE
FE
FF
FF
FF