SAM9G10 Atmel Corporation, SAM9G10 Datasheet - Page 464

no-image

SAM9G10

Manufacturer Part Number
SAM9G10
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM9G10

Flash (kbytes)
0 Kbytes
Pin Count
217
Max. Operating Frequency
266 MHz
Cpu
ARM926
Hardware Qtouch Acquisition
No
Max I/o Pins
96
Ext Interrupts
96
Usb Transceiver
3
Usb Speed
Full Speed
Usb Interface
Host, Device
Spi
2
Twi (i2c)
1
Uart
4
Ssc
3
Sd / Emmc
1
Graphic Lcd
Yes
Video Decoder
No
Camera Interface
No
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
16
Self Program Memory
NO
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.08 to 1.32
Fpu
No
Mpu / Mmu
No/Yes
Timers
3
Output Compare Channels
3
Input Capture Channels
3
32khz Rtc
Yes
Calibrated Rc Oscillator
No
30.7.6
Name:
Address:
Access:
Reset:
This register can only be written if the bit WPEN is cleared in
• TXARD: Exit Active Power Down Delay to Read Command in Mode “Fast Exit”.
The Reset Value is 2 cycles.
This field defines the delay between cke set high and a Read Command in number of cycles. Number of cycles is between
0 and 15.
Note: This field is found only in DDR2-SDRAM devices.
• TXARDS: Exit Active Power Down Delay to Read Command in Mode “Slow Exit”.
The Reset Value is 6 cycles.
This field defines the delay between cke set high and a Read Command in number of cycles. Number of cycles is between
0 and 15.
Note: This field is found only in DDR2-SDRAM devices.
• TRPA: Row Precharge All Delay
The Reset Value is 0 cycle.
This field defines the delay between a Precharge ALL banks Command and another command in number of cycles. Num-
ber of cycles is between 0 and 15.
Note: This field is found only in DDR2-SDRAM devices.
• TRTP: Read to Precharge
The Reset Value is 2 cycles.
This field defines the delay between Read Command and a Precharge command in number of cycle.
Number of cycles is between 0 and 7.
• TFAW: Four Active window
The Reset Value is 4 cycles.
DDR2 devices with 8-banks (1Gb or larger) have an additional requirement: t
ACTIVATE commands may be issued in any given t
Number of cycles is between 0 and 15.
Note: This field is found only in DDR-SDRAM 2 devices with eight internal banks
464
464
31
23
15
7
SAM9G35
SAM9G35
DDRSDRC Timing Parameter 2 Register
30
22
14
DDRSDRC_TPR2
0xFFFFE814
Read-write
See
6
TXARDS
Table 30-16
TRTP
29
21
13
5
FAW
28
20
12
4
(MIN) period.
“DDRSDRC Write Protect Mode Register” on page
27
19
11
3
FAW
. This requires that no more than four
26
18
10
2
TXARD
TRPA
TFAW
25
17
9
1
11053B–ATARM–22-Sep-11
11053B–ATARM–22-Sep-11
470.
24
16
8
0

Related parts for SAM9G10