CGD1046HI NXP Semiconductors, CGD1046HI Datasheet

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CGD1046HI

Manufacturer Part Number
CGD1046HI
Description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
CGD1046HI
Manufacturer:
XILINX
Quantity:
101
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
Table 1.
Bandwidth 40 MHz to 1003 MHz; V
specified.
[1]
[2]
Symbol Parameter
G
CTB
CCN
I
tot
p
CGD1046HI
1 GHz, 27 dB gain GaAs high output power doubler
Rev. 1 — 30 July 2010
Excellent linearity
Superior levels of ESD protection
Extremely low noise
Excellent return loss properties
Gain compensation over temperature
Rugged construction
Unconditionally stable
Thermally optimized design
Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
Integrated ring wave surge protection
CATV systems operating in the 40 MHz to 1003 MHz frequency range
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset);
tilt extrapolated to 13.5 dB at 1003 MHz.
Direct Current (DC).
power gain
composite triple beat
carrier-to-composite noise
total current
Quick reference data
B
= 24 V (DC); Z
Conditions
f = 45 MHz
f = 1003 MHz
V
V
o
o
= 56.4 dBmV at 1003 MHz
= 56.4 dBmV at 1003 MHz
S
= Z
L
= 75
Ω
; T
mb
= 35
[1]
[1]
[2]
Product data sheet
Min Typ Max Unit
-
26.5 27
-
57
-
°
C; unless otherwise
25.5 -
−75
63
450
28
−65
-
465
dB
dB
dBc
dBc
mA

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CGD1046HI Summary of contents

Page 1

... CGD1046HI 1 GHz gain GaAs high output power doubler Rev. 1 — 30 July 2010 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. 1.2 Features and benefits ...

Page 2

... Limiting values supply voltage RF input voltage electrostatic discharge voltage storage temperature mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 July 2010 CGD1046HI Simplified outline Graphic symbol Conditions single tone [1] Human Body Model (HBM); ...

Page 3

... MHz 56.4 dBmV at 1003 MHz 58.4 dBmV at 1003 MHz o = 58.4 dBmV at 1003 MHz 58.4 dBmV at 1003 MHz o All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 July 2010 CGD1046HI ° unless otherwise specified. Min - 26.5 27 [1] 0.7 [ ...

Page 4

... max. min. max. 2.04 4.15 2.4 38.1 25.4 10.2 4.2 44.75 13.75 2.54 5.08 12.7 8.8 2.54 3.85 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 July 2010 CGD1046HI ...

Page 5

... CATV ESD GaAs NTSC RF UNC 8. Revision history Table 7. Revision history Document ID Release date CGD1046HI v.1 20100730 CGD1046HI Product data sheet 1 GHz gain GaAs high output power doubler Abbreviations Description Community Antenna TeleVision ElectroStatic Discharge Gallium-Arsenide National Television Standard Committee Radio Frequency ...

Page 6

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 July 2010 CGD1046HI © NXP B.V. 2010. All rights reserved ...

Page 7

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 30 July 2010 CGD1046HI Trademarks © NXP B.V. 2010. All rights reserved ...

Page 8

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com CGD1046HI All rights reserved. Date of release: 30 July 2010 Document identifier: CGD1046HI ...

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