BAT54VV NXP Semiconductors, BAT54VV Datasheet - Page 3

• Manufacturer Part Number: BAT54VV
• Description: Planar Schottky barrier triple diode with an integrated guard ring for stress protection
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
BAT54VV_2
Product data sheet
Table 7.
T
[1]
Symbol
Per diode
V
I
C
R
amb
F
d
Pulse test: t
= 25
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 15 January 2010
Schottky barrier triple diode in ultra small SOT666 package
Conditions
see
V
V
see
R
R
I
I
I
I
I
F
F
F
F
F
= 25 V; see
= 1 V; f = 1 MHz;
Figure
Figure 3
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
1;
Figure 2
[1]
Min
-
-
-
-
-
-
-
BAT54VV
Typ
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
240
320
400
500
800
2
10
Unit
mV
mV
mV
mV
mV
μA
pF
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