BAS28 NXP Semiconductors, BAS28 Datasheet - Page 4

• Manufacturer Part Number: BAS28
• Description: The BAS28 consists of twohigh-speed switching diodes,fabricated in planar technology, andencapsulated in the small plasticSMD SOT143 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
BAS28
Product data sheet
Fig 1.
(mA )
(1) T
(2) T
(3) T
300
200
100
I
F
0
Forward current as a function of forward
voltage
0
j
j
j
= 150 °C; typical values
= 25 °C; typical values
= 25 °C; maximum values
Table 7.
T
[1]
[2]
Symbol
Per diode
V
I
C
t
V
R
rr
amb
F
FR
d
(1)
When switched from I
When switched from I
= 25
1
(2)
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Characteristics
V
(3)
F
(V)
All information provided in this document is subject to legal disclaimers.
mbg382
F
F
= 10 mA to I
= 10 mA; t
2
Rev. 3 — 22 July 2010
r
= 20 ns.
R
= 10 mA; R
I
f = 1 MHz; V
Conditions
I
I
I
V
V
V
V
Fig 2.
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 75 V
= 25 V; T
= 75 V; T
I
FSM
(A)
10
10
10
−1
1
2
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
L
j
= 100 Ω; measured at I
= 25 °C; prior to surge
j
j
R
= 150 °C
= 150 °C
= 0 V
10
[1]
[2]
10
2
High-speed double diode
Min
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
10
Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
3
t
p
(μs)
mbg704
BAS28
Max
715
855
1
1.25
30
1
30
50
1.5
4
1.75
10
4
Unit
mV
mV
V
V
nA
μA
μA
μA
pF
ns
V
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