PESD3V3X1BL NXP Semiconductors, PESD3V3X1BL Datasheet
PESD3V3X1BL
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PESD3V3X1BL Summary of contents
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... PESD3V3X1BL Ultra low capacitance bidirectional ESD protection diode Rev. 01 — 6 January 2009 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. ...
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... Marking codes Limiting values Parameter Conditions junction temperature ambient temperature storage temperature ESD maximum ratings Parameter electrostatic discharge voltage Rev. 01 — 6 January 2009 PESD3V3X1BL Simplified outline Graphic symbol 1 2 Transparent top view 0.6 0.5 mm Marking code SS Min - ...
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... Ultra low capacitance bidirectional ESD protection diode ESD standards compliance I PP 100 % 0 ESD pulse waveform according to IEC 61000-4-2 Rev. 01 — 6 January 2009 PESD3V3X1BL Conditions > (contact) > 001aaa631 © NXP B.V. 2009. All rights reserved ...
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... Characteristics Parameter Conditions reverse standoff voltage reverse leakage current V breakdown voltage I R diode capacitance MHz; V differential resistance I R 006aab412 (V) R Fig 3. Rev. 01 — 6 January 2009 PESD3V3X1BL Min Typ - - = RWM = 5 mA 5.0 6 ...
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... ESD pulse waveform (IEC 61000-4-2 network) pin vertical scale = 2 kV/div horizontal scale = 15 ns/div GND clamped 8 kV ESD pulse waveform (IEC 61000-4-2 network) pin Rev. 01 — 6 January 2009 PESD3V3X1BL 4 GHz DIGITAL OSCILLOSCOPE 10 ATTENUATOR 50 vertical scale = 20 V/div horizontal scale = 100 ns/div ...
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... NXP Semiconductors 7. Application information The PESD3V3X1BL is designed for the protection of one bidirectional data or signal line from the damage caused by ESD. The device may be used on lines where the signal polarities are both, positive and negative with respect to ground. Fig 5. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD and Electrical Fast Transient (EFT) ...
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... For further information and the availability of packing methods, see PESD3V3X1BL_1 Product data sheet Ultra low capacitance bidirectional ESD protection diode 0.62 0.55 2 0.30 0.22 0.30 0.22 1 0.55 0.47 Dimensions in mm Package outline PESD3V3X1BL (SOD882) Packing methods Package Description SOD882 2 mm pitch tape and reel Rev. 01 — 6 January 2009 PESD3V3X1BL 0.50 0.46 1.02 0.65 0.95 cathode marking on top side 03-04-17 ...
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... Fig 7. PESD3V3X1BL_1 Product data sheet Ultra low capacitance bidirectional ESD protection diode 1.3 0 Reflow soldering is the only recommended soldering method. Reflow soldering footprint PESD3V3X1BL (SOD882) Rev. 01 — 6 January 2009 PESD3V3X1BL R0. 0.6 0 Dimensions in mm © NXP B.V. 2009. All rights reserved. solder lands ...
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... Revision history Table 10. Revision history Document ID Release date PESD3V3X1BL_1 20090106 PESD3V3X1BL_1 Product data sheet Ultra low capacitance bidirectional ESD protection diode Data sheet status Change notice Product data sheet - Rev. 01 — 6 January 2009 PESD3V3X1BL Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Semiconductors accepts no liability for use in such applications and therefore such use is at the customer’s own risk. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 6 January 2009 PESD3V3X1BL © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 6 January 2009 Document identifier: PESD3V3X1BL_1 ...