PESD3V3X1BL NXP Semiconductors, PESD3V3X1BL Datasheet - Page 2

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in aleadless ultra small Surface-Mounted Device (SMD) plastic package designed to protectone signal line from the damage caused by ESD and other transients

PESD3V3X1BL

Manufacturer Part Number
PESD3V3X1BL
Description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in aleadless ultra small Surface-Mounted Device (SMD) plastic package designed to protectone signal line from the damage caused by ESD and other transients
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PESD3V3X1BL
Manufacturer:
JXND
Quantity:
20 000
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PESD3V3X1BL_1
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6.
T
[1]
Pin
1
2
Type number
PESD3V3X1BL
Type number
PESD3V3X1BL
Symbol
Per device
T
T
T
Symbol
V
amb
j
amb
stg
ESD
Device stressed with ten non-repetitive ESD pulses.
= 25 C unless otherwise specified.
Description
cathode (diode 1)
cathode (diode 2)
Parameter
electrostatic discharge voltage
Pinning
Ordering information
Marking codes
Limiting values
ESD maximum ratings
Parameter
junction temperature
ambient temperature
storage temperature
Package
Name
-
Rev. 01 — 6 January 2009
Ultra low capacitance bidirectional ESD protection diode
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
Conditions
0.6
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
Simplified outline
Marking code
SS
0.5 mm
Transparent
1
top view
2
PESD3V3X1BL
Min
-
55
65
Graphic symbol
[1]
Min
-
-
© NXP B.V. 2009. All rights reserved.
Max
150
+150
+150
1
Max
9
10
006aab041
Version
SOD882
Unit
C
C
C
2
Unit
kV
kV
2 of 11

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