PUSBMXX4-TL_SER NXP Semiconductors, PUSBMXX4-TL_SER Datasheet - Page 4

• Manufacturer Part Number: PUSBMXX4-TL_SER
• Description: PUSBMxX4-TL is a series of four 4-channel ElectroStatic Discharge (ESD) diode arraysfor USB 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
[1]
PUSBMXX4-TL_SER
Preliminary data sheet
Symbol
V
Low capacitance ESD protection
V
C
C
C
I
BUS ESD protection
V
C
I
RM
RM
amb
F
BRzd
BR
(I/O-GND)
(I/O-I/O)
d
(I/O-GND)
Guaranteed by design.
= 25

C unless otherwise specified.
Characteristics
Parameter
forward voltage
Zener diode breakdown
voltage
input/output to ground
capacitance
input/output to ground
capacitance variation
input/output to input/output
capacitance
reverse leakage current
breakdown voltage
diode capacitance
reverse leakage current
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
PUSBM5V5X4-TL
PUSBM12VX4-TL
PUSBM15VX4-TL
PUSBM30VX4-TL
All information provided in this document is subject to legal disclaimers.
Conditions
I
V
pins 1, 2, 3 to GND
V
V
pins 1 to 2, 1 to 3, 2 to 3
pins 1, 2, 3 to GND; V
pin 6 (V
V
pin 6 (V
pin 6 (V
test
bias(DC)
bias(DC)
bias(DC)
bias(DC)
V
V
V
V
Rev. 1 — 9 December 2011
RWM
RWM
RWM
RWM
= 1 mA
BUS
BUS
BUS
= 5.5 V
= 12 V
= 15 V
= 30 V
= 0.5 V; f = 1 MHz;
= 0.5 V; f = 1 MHz
= 0.5 V; f = 1 MHz;
= 0.5 V; f = 1 MHz;
) to GND; I
) to GND
) to GND
High-speed USB OTG ESD protection diode arrays
RWM
test
= 1 mA
PUSBMxX4-TL series
= 5.5 V
[1]
Min
0.6
6
-
-
-
-
6.4
12.5
17
32
-
-
-
-
-
-
-
-
Typ
-
-
1.1
0.02
0.5
100
6.8
14.5
18
36
165
73
60
50
200
1
1
1
© NXP B.V. 2011. All rights reserved.
Max
1.2
10
1.3
-
-
1000
7.2
16
19
40
220
100
90
70
500
100
100
100
Unit
V
V
pF
pF
pF
nA
V
V
V
V
pF
pF
pF
pF
nA
nA
nA
nA
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