BUK6246-75C NXP Semiconductors, BUK6246-75C Datasheet

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology

BUK6246-75C

Manufacturer Part Number
BUK6246-75C
Description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK6246-75C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 13 July 2011
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C;
Figure 1
Figure 11
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 10 A;
= 25 °C;
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
Figure 2
Min
-
-
-
-
Product data sheet
Typ
-
-
-
39
Max Unit
75
22
60
46
V
A
W
mΩ

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BUK6246-75C Summary of contents

Page 1

... BUK6246-75C N-channel TrenchMOS intermediate level FET Rev. 1 — 13 July 2011 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... Figure Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C N-channel TrenchMOS intermediate level FET Min ≤ sup = ...

Page 3

... T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C Min Max - 75 [1] -16 16 [2] -20 20 Figure Figure ...

Page 4

... Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C N-channel TrenchMOS intermediate level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6246-75C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C Min Typ Max - - 2.52 003aae881 t P δ ...

Page 6

... Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C Min Typ Max Unit 1.8 2.3 2.8 V ...

Page 7

... 003aae870 (A) D Fig 6. 003aae872 = 25 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C N-channel TrenchMOS intermediate level FET Min Typ - 0 10.0 ( ...

Page 8

... Fig 10. Sub-threshold drain current as a function of 003aae876 4.0 4.5 5.0 10 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C N-channel TrenchMOS intermediate level FET - ( min typ max - ...

Page 9

... Fig 14. Gate-source voltage as a function of gate 003aae879 C iss C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C N-channel TrenchMOS intermediate level FET (V) 8 14V 60V charge ...

Page 10

... min min 5.46 0.56 6.22 6.73 4.45 4.0 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C N-channel TrenchMOS intermediate level FET min 10.4 2.95 0.5 2.285 4.57 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6246-75C v.1 20110713 BUK6246-75C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 ...

Page 12

... Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 July 2011 BUK6246-75C Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 13 July 2011 Document identifier: BUK6246-75C ...

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