BUK626R2-40C NXP Semiconductors, BUK626R2-40C Datasheet
BUK626R2-40C
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BUK626R2-40C Summary of contents
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... BUK626R2-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 12 July 2011 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... GS see Figure 14 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13 ...
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... T pulsed ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C Min Max - 40 [1] -16 16 [2] -20 20 [3] Figure Figure ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C 0 50 100 150 T 003aae720 = 10 μ 100 μ 100 ms 10 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK626R2-40C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C Min Typ Max - - 1.17 003aae418 t p δ ...
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... Ω R G(ext) from upper edge of drain mounting base to centre of die ; T j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C Min Typ Max = 25 ° -55 ° °C; ...
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... V (V) DS Fig 6. 003aae727 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C N-channel TrenchMOS intermediate level FET Min Typ = 25 ° 100 Forward transconductance as a function of drain current ...
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... Fig 10. Sub-threshold drain current as a function of 003aae725 4.5 5.0 6.0 8 100 150 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C N-channel TrenchMOS intermediate level FET - ( min typ max - ...
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... Fig 14. Gate-source voltage as a function of gate 003aae724 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C N-channel TrenchMOS intermediate level FET (V) 8 32V V = 14V charge ...
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... min min 5.46 0.56 6.22 6.73 4.45 4.0 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C N-channel TrenchMOS intermediate level FET min 10.4 2.95 0.5 2.285 4.57 9.6 2.55 EUROPEAN PROJECTION SOT428 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK626R2-40C v.1 20110712 BUK626R2-40C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 ...
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... Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 July 2011 BUK626R2-40C Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 July 2011 Document identifier: BUK626R2-40C ...