BUK6C2R1-55C NXP Semiconductors, BUK6C2R1-55C Datasheet
BUK6C2R1-55C
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BUK6C2R1-55C Summary of contents
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... BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 18 January 2012 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotive applications ...
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... SOT427 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Min Typ = 13; ≤ sup = 10 V; ...
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... P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C Min - [1] -20 [2] -16 Figure ≤ 10 µ -55 - ° Ω; ...
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... BUK6C2R1-55C Product data sheet = DSon All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C N-channel TrenchMOS intermediate level FET =10 μ 100 μ 100 (V) DS Conditions Min Typ ...
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... Ω R G(ext ° see Figure /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C Min Typ Max 1.8 2.3 2.8 0 3 500 - 2 100 ...
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... V (V) DS Fig 6. 003aaf969 R DSon (mΩ) 200 300 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C N-channel TrenchMOS intermediate level FET 300 D 200 100 = 175 ° ° Transfer characteristics: drain current as a function of gate-source voltage ...
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... Fig 10. Gate-source threshold voltage as a function of 003aaf971 4.0 4.5 5.0 10.0 300 400 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C N-channel TrenchMOS intermediate level FET 4 3 max @1mA 2 typ @1mA min @2.5mA 120 ...
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... I S (A) C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C N-channel TrenchMOS intermediate level FET GS(pl) V GS(th GS1 GS2 ...
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... max. 2.90 1.60 10.30 11 1.27 2.10 1.20 9.70 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C N-channel TrenchMOS intermediate level FET mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT427 ISSUE DATE 05-03-09 06-03-16 © NXP B.V. 2012. All rights reserved. ...
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... Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C Supersedes BUK6C2R1-55C v.2 BUK6C2R1-55C v.1 © NXP B.V. 2012. All rights reserved ...
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... Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C © NXP B.V. 2012. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C2R1-55C Trademarks © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 January 2012 Document identifier: BUK6C2R1-55C ...