BUK6C3R3-75C NXP Semiconductors, BUK6C3R3-75C Datasheet

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK6C3R3-75C

Manufacturer Part Number
BUK6C3R3-75C
Description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in high-performance automotive
applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK6C3R3-75C
N-channel TrenchMOS intermediate level FET
Rev. 3 — 18 January 2012
AEC Q101 compliant
High current handling capability, up to
320 A
Low conduction losses due to very low
on-state resistance
12 V and 24 V automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoids
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
V
see
V
T
see
T
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C;
Figure 1
= 25 °C; see
Figure 11
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 90 A;
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
= 25 °C;
Figure 2
Min
-
-
-
-
Product data sheet
Typ
-
-
-
2.85
Max
75
181
300
3.4
Unit
V
A
W
mΩ

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BUK6C3R3-75C Summary of contents

Page 1

... BUK6C3R3-75C N-channel TrenchMOS intermediate level FET Rev. 3 — 18 January 2012 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotive applications ...

Page 2

... SOT427 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C N-channel TrenchMOS intermediate level FET Min Typ = Figure 13; < sup = 10 V ...

Page 3

... P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C Min - [1] -20 [2] -16 Figure 1 - Figure 1 - ≤ 10 µ -55 - ° Ω ...

Page 4

... BUK6C3R3-75C Product data sheet = DSon All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C N-channel TrenchMOS intermediate level FET =10 μ 100 μ 100 (V) DS Conditions Min Typ ...

Page 5

... Ω R G(ext ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C Min Typ Max 1.8 2.3 2.8 0 3 500 - 2 100 ...

Page 6

... V (V) DS Fig 6. 003aaf933 180 240 300 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C N-channel TrenchMOS intermediate level FET 240 I D (A) 180 120 60 = 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...

Page 7

... Fig 10. Gate-source threshold voltage as a function of 003aaf935 4.5 ( 5.0 6.0 10.0 300 400 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C N-channel TrenchMOS intermediate level FET 4 V GS(th) (V) 3 max @1mA 2 typ @1mA min @2.5mA ...

Page 8

... I S (A) C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C N-channel TrenchMOS intermediate level FET GS(pl) V GS(th GS1 GS2 ...

Page 9

... max. 2.90 1.60 10.30 11 1.27 2.10 1.20 9.70 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C N-channel TrenchMOS intermediate level FET mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT427 ISSUE DATE 05-03-09 06-03-16 © NXP B.V. 2012. All rights reserved. ...

Page 10

... Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Product data sheet Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C Change notice Supersedes - BUK6C3R3-75C v.2 - BUK6C3R3-75C v.1 © NXP B.V. 2012. All rights reserved ...

Page 11

... Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C © NXP B.V. 2012. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 January 2012 BUK6C3R3-75C Trademarks © NXP B.V. 2012. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 January 2012 Document identifier: BUK6C3R3-75C ...

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