BUK714R1-40BT NXP Semiconductors, BUK714R1-40BT Datasheet - Page 9

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology

BUK714R1-40BT

Manufacturer Part Number
BUK714R1-40BT
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK714R1-40BT
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NXP Semiconductors
BUK714R1-40BT_2
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Forward voltage of temperature sense diode as
100
V F
(V)
(A)
I D
1.8
1.6
1.4
1.2
1.0
75
50
25
0
function of gate-source voltage; typical values
a function of junction temperature; typical
values
0
0
50
2
T j = 175 °C
T j = 25 °C
100
4
150
V GS (V)
T j (°C)
03nq19
03nq79
Rev. 02 — 10 February 2009
200
6
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Reverse diode current as a function of reverse
V GS
100
(V)
(A)
I S
10
75
50
25
8
6
4
2
0
0
gate charge; typical values
diode voltage; typical values
0.0
N-channel TrenchPLUS standard level FET
0
0.3
25
V DD = 14 V
T j = 25 °C
BUK714R1-40BT
T j = 175 °C
0.6
50
V DD = 32 V
0.9
75
© NXP B.V. 2009. All rights reserved.
Q g (nC)
V SD (V)
03nq21
03nq20
100
1.2
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