BUK7210-55B NXP Semiconductors, BUK7210-55B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology

BUK7210-55B

Manufacturer Part Number
BUK7210-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
Table 1.
[1]
Symbol Parameter
V
I
Static characteristics
R
Avalanche ruggedness
E
D
DS
DS(AL)S
DSon
185 °C rated
Q101 compliant
12 V and 24 V loads
Automotive systems
Continuous current is limited by package.
BUK7210-55B
N-channel TrenchMOS standard level FET
Rev. 01 — 11 December 2008
drain-source voltage T
drain current
drain-source
on-state resistance
non-repetitive
drain-source
avalanche energy
Quick reference
Conditions
V
see
V
T
see
I
R
T
inductive load
D
j
j
j(init)
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 75 A; V
Figure
Figure 9
= 10 V; T
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
≤ 185 °C
mb
GS
= 25 A;
≤ 55 V;
Figure
= 25 °C;
= 10 V;
Figure
10;
Standard level compatible
Very low on-state resistance
General purpose power switching
Motors, lamps and solenoids
3;
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
8.5
-
Max
55
75
10
173
Unit
V
A
mΩ
mJ

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BUK7210-55B Summary of contents

Page 1

... BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 — 11 December 2008 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... DPAK lead cropped) BUK7210-55B_1 Product data sheet N-channel TrenchMOS standard level FET Simplified outline mb [ SOT428 (SC-63; DPAK) Rev. 01 — 11 December 2008 BUK7210-55B Graphic symbol mbb076 Version SOT428 © NXP B.V. 2008. All rights reserved ...

Page 3

... °C; mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped inductive load j(init) Rev. 01 — 11 December 2008 BUK7210-55B N-channel TrenchMOS standard level FET Min Max - - [1] - 89.6 - 65 335 ...

Page 4

... T (°C) mb Fig 2. function of mounting base temperature = Rev. 01 — 11 December 2008 BUK7210-55B N-channel TrenchMOS standard level FET 03no96 0 50 100 150 T mb Normalized total power dissipation as a 003aac272 = 10 μ 100 μ 100 ms ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7210-55B_1 Product data sheet Conditions see Figure 4 Mounted on a printed circuit board; vertical in still air.; minimum footprint - Rev. 01 — 11 December 2008 BUK7210-55B N-channel TrenchMOS standard level FET Min Typ Max - - 0. 003aac273 t p δ ...

Page 6

... Ω °C G(ext) j measured from drain to center of die °C j measured from source lead to source bond pad °C j Rev. 01 — 11 December 2008 BUK7210-55B N-channel TrenchMOS standard level FET Min Typ Max 1. 0 ...

Page 7

... DS j 003aac279 18 R DSon (m Ω ° VGS (V) Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. Rev. 01 — 11 December 2008 BUK7210-55B N-channel TrenchMOS standard level FET Min Typ Max - 0.85 1 0.73 - ...

Page 8

... Sub-threshold drain current as a function of gate-source voltage 003aac283 25 R DSon (mΩ 150 220 (°C) Fig 10. Drain-source on-state resistance as a function of drain current; typical values Rev. 01 — 11 December 2008 BUK7210-55B 03aa35 min typ max (V) GS 003aac276 Lable ...

Page 9

... SD 003aac280 3000 C (pF) 2000 VDD = 44 V 1000 (nC) G Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 01 — 11 December 2008 BUK7210-55B GS1 GS2 G(tot) 003aaa508 003aac278 C iss C oss C ...

Page 10

... Fig 15. Output characteristics: drain current as a function of drain-source voltage; typical values BUK7210-55B_1 Product data sheet 003aac274 20 Label Rev. 01 — 11 December 2008 BUK7210-55B N-channel TrenchMOS standard level FET 10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 10 (V) © NXP B.V. 2008. All rights reserved ...

Page 11

... min min 0.56 6.22 6.73 4.0 4.45 2.285 0.20 5.98 6.47 REFERENCES JEDEC JEITA TO-252 SC-63 Rev. 01 — 11 December 2008 BUK7210-55B N-channel TrenchMOS standard level FET min 10.4 2.95 0.9 0.5 4.57 9.6 2.55 0.5 EUROPEAN ISSUE DATE PROJECTION 06-02-14 06-03-16 © NXP B.V. 2008. All rights reserved. ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7210-55B_1 20081211 BUK7210-55B_1 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Rev. 01 — 11 December 2008 BUK7210-55B Supersedes - © NXP B.V. 2008. All rights reserved ...

Page 13

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 11 December 2008 BUK7210-55B N-channel TrenchMOS standard level FET © NXP B.V. 2008. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2008 Document identifier: BUK7210-55B_1 All rights reserved. ...

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