BUK7210-55B NXP Semiconductors, BUK7210-55B Datasheet - Page 3

• Manufacturer Part Number: BUK7210-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7210-55B_1
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
[1]
[2]
[3]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
Conditions
T
R
T
see
T
T
see
T
T
T
T
t
I
T
p
D
j
mb
mb
mb
mb
mb
mb
mb
j(init)
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 75 A; V
= 25 °C; V
Figure
= 100 °C; V
= 25 °C; V
Figure
= 25 °C; t
= 25 °C; see
= 25 °C;
= 25 °C;
= 20 kΩ; 25 °C ≤ T
= 25 °C; unclamped inductive load
Rev. 01 — 11 December 2008
3;
3;
sup
j
≤ 185 °C
p
GS
GS
≤ 55 V; R
≤ 10 µs; pulsed
GS
Figure 2
= 10 V; see
= 10 V; see
= 10 V; see
mb
= 25 °C
j
≤ 185 °C
GS
= 50 Ω; V
Figure
Figure
Figure 1
N-channel TrenchMOS standard level FET
1;
1;
GS
= 10 V;
[1]
[2]
[2]
[3]
BUK7210-55B
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
55
55
20
89.6
65.5
75
335
167
185
185
75
89.6
335
173
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
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