BUK7210-55B NXP Semiconductors, BUK7210-55B Datasheet - Page 4

• Manufacturer Part Number: BUK7210-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7210-55B_1
Product data sheet
Fig 1.
Fig 3.
(A)
I
(A)
10
10
D
100
I
D
10
75
50
25
3
2
1
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
Capped at 75 A due to package
50
Capped at 75A due to package
Limit R
100
DSon
= V
DS
150
/ I
D
T
003aac284
mb
(°C)
Rev. 01 — 11 December 2008
200
DC
10
Fig 2.
P
(%)
120
der
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
50
BUK7210-55B
100
V
DS
(V)
t
100 μ s
1 ms
10 ms
100 ms
150
p
= 10 μ s
© NXP B.V. 2008. All rights reserved.
T
003aac272
mb
03no96
(°C)
10
200
2
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