BUK725R0-40C NXP Semiconductors, BUK725R0-40C Datasheet
BUK725R0-40C
Available stocks
Related parts for BUK725R0-40C
BUK725R0-40C Summary of contents
Page 1
... BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 — 23 March 2009 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications ...
Page 2
... DPAK lead cropped) BUK725R0-40C_1 Product data sheet N-channel TrenchMOS standard level FET Simplified outline SOT428 (SC-63; DPAK) Rev. 01 — 23 March 2009 BUK725R0-40C Graphic symbol mbb076 Version SOT428 © NXP B.V. 2009. All rights reserved ...
Page 3
... °C; mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) see Figure 4 Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET Min Max - - [ [ Figure 3 - 490 - 157 ...
Page 4
... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = DSon 100 Rev. 01 — 23 March 2009 BUK725R0-40C 03na19 50 100 150 200 T (°C) mb 003aac305 10 μs 100 μ (V) DS © NXP B.V. 2009. All rights reserved. ...
Page 5
... Conditions see Figure 5 vertical in still air; mounted on a printed circuit board; minimum foot-print - Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET 003aac068 10 t (ms) AL Min Typ Max - 0.65 0. 003aac067 δ ...
Page 6
... ° ° see Figure /dt = -100 A/µ - ° Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET Min Typ Max 4 500 - 0.05 ...
Page 7
... Output characteristics: drain current as a function of drain-source voltage; typical values 003aac248 30 R DSon (mΩ (A) D Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET 003aac245 ( 6.5 6 5 ...
Page 8
... Fig 11. Sub-threshold drain current as a function of gate-source voltage 03aa27 DSon (mΩ 120 180 ( ° Fig 13. Drain-source on-state resistance as a function of drain current; typical values Rev. 01 — 23 March 2009 BUK725R0-40C 03aa35 min typ max (V) GS 003aac250 5 ( ...
Page 9
... C (pF) C iss 4000 C oss 3000 2000 C rss 1000 Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET 003aac247 (nC) G 003aac246 2 10 (V) DS © NXP B.V. 2009. All rights reserved ...
Page 10
... min min 0.56 6.22 6.73 4.0 4.45 2.285 0.20 5.98 6.47 REFERENCES JEDEC JEITA TO-252 SC-63 Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET min 10.4 2.95 0.9 0.5 4.57 9.6 2.55 0.5 EUROPEAN ISSUE DATE PROJECTION 06-02-14 06-03-16 © NXP B.V. 2009. All rights reserved. ...
Page 11
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK725R0-40C_1 20090323 BUK725R0-40C_1 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Rev. 01 — 23 March 2009 BUK725R0-40C Supersedes - © NXP B.V. 2009. All rights reserved ...
Page 12
... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
Page 13
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK725R0-40C_1 All rights reserved. Date of release: 23 March 2009 ...