BUK762R0-40C NXP Semiconductors, BUK762R0-40C Datasheet

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology

BUK762R0-40C

Manufacturer Part Number
BUK762R0-40C
Description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in
Automotive critical applications.
Table 1.
[1]
[2]
Symbol Parameter
I
P
Static characteristics
R
Avalanche ruggedness
E
D
tot
DS(AL)S
DSon
BUK762R0-40C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 August 2007
175 °C rated
Q101 compliant
12 V loads
General purpose power switching
Continuous current is limited by package.
Refer to document 9397 750 12572 for further information.
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
Quick reference
V
T
Conditions
see
V
T
12
I
R
T
type unclamped inductive load
D
mb
j
j(init)
GS
GS
GS
= 25 °C; see
= 100 A; V
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
= 50 Ω; V
= 25 °C; inductive load
D
sup
and
mb
GS
= 25 A;
Figure 13
≤ 40 V;
= 25 °C;
= 10 V;
Figure 2
4
Low on-state resistance
Standard level compatible
Automotive systems
Motors, lamps, solenoids
and
[1][2]
Min
-
-
-
-
Product data sheet
Typ
-
-
1.7
-
Max Unit
100
333
2
1.2
A
W
J

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BUK762R0-40C Summary of contents

Page 1

... BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive critical applications ...

Page 2

... Figure 2 mb ≤ Ω 100 sup °C; inductive load type j(init) unclamped inductive load see Figure 3 Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET Graphic Symbol mbb076 2 3 Min Max - -20 20 ...

Page 3

... P der (%) 150 200 T (° der Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET Min Max [1] - 276 [2][3] - 100 - 1104 03aa16 50 100 150 ( ° tot = × ...

Page 4

... V /I DSon Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET 003aab013 10 t (ms) AL 003aab028 δ μs 100 μ 100 (V) DS © NXP B.V. 2007. All rights reserved ...

Page 5

... 175 °C; see T Figure ° 175 ° Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET Min Typ Max - 0.45 003aab020 δ −2 − (s) p ...

Page 6

... GS G(ext ° 1.2 Ω Ω G(ext ° 1.2 Ω Ω G(ext ° Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET Min Typ Max - 2 100 - 2 100 - - 3. 0.85 1 175 - - ...

Page 7

... I D (A) 300 200 100 ( Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET Min Typ Max - 119 - - 2 7.5 - 003aab010 = 175 ° ° ...

Page 8

... V GS(th) (V) max − ( Fig 11. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET 003aab083 5 100 200 I ( °C 03aa32 max typ min 0 ...

Page 9

... Q (nC Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET 03aa27 0 60 120 ( ° DSon R DSon ( 25°C ) 003aab009 C iss ...

Page 10

... Fig 16. Source current as a function of source-drain voltage; typical values BUK762R0-40C_2 Product data sheet 200 I S (A) 150 100 = 175 ° ° 0.0 0.5 1.0 1.5 Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET 003aab012 2.0 V (V) SD © NXP B.V. 2007. All rights reserved ...

Page 11

... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2007. All rights reserved. SOT404 ...

Page 12

... NXP Semiconductors 8. Soldering 2.25 8.35 8.15 4.60 4.85 7.95 solder lands solder resist occupied area solder paste Fig 18. Reflow soldering footprint for SOT404 BUK762R0-40C_2 Product data sheet 10.85 10.60 10.50 1.50 7.50 7.40 2.15 1.50 0.30 3.00 5.08 Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET 1.70 8.275 5.40 8.075 0.20 1.20 1.30 1.55 msd057 © NXP B.V. 2007. All rights reserved ...

Page 13

... Legal texts have been adapted to the new company name where appropriate. BUK762R0-40C_1 20060810 BUK762R0-40C_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 20 August 2007 BUK762R0-40C Supersedes BUK762R0-40C_1 - © NXP B.V. 2007. All rights reserved ...

Page 14

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 20 August 2007 BUK762R0-40C N-channel TrenchMOS standard level FET © NXP B.V. 2007. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK762R0-40C_2 All rights reserved. Date of release: 20 August 2007 ...

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