BUK7E2R3-40C NXP Semiconductors, BUK7E2R3-40C Datasheet
BUK7E2R3-40C
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BUK7E2R3-40C Summary of contents
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... BUK7E2R3-40C N-channel TrenchMOS standard level FET Rev. 03 — 26 January 2009 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications ...
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... TO-220AB I2PAK BUK7E2R3-40C_3 Product data sheet N-channel TrenchMOS standard level FET Simplified outline SOT226 (TO-220AB; I2PAK) Rev. 03 — 26 January 2009 BUK7E2R3-40C Graphic symbol mbb076 Version SOT226 © NXP B.V. 2009. All rights reserved ...
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... °C; mb ≤ 10 µs; pulsed ° ≤ Ω 100 sup °C; unclamped j(init) see Figure 4; Rev. 03 — 26 January 2009 BUK7E2R3-40C N-channel TrenchMOS standard level FET Min Max - - [1][2] - 100 1; [1][3] - 276 1; [1][2] - 100 Figure 3 - ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = V /I DSon Rev. 03 — 26 January 2009 BUK7E2R3-40C N-channel TrenchMOS standard level FET 03aa16 50 100 150 T (°C) mb 003aab028 δ μs 100 μ 100 (V) DS © ...
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... Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7E2R3-40C_3 Product data sheet ( (1) ( Rev. 03 — 26 January 2009 BUK7E2R3-40C N-channel TrenchMOS standard level FET 003aab013 10 t (ms) AL © NXP B.V. 2009. All rights reserved ...
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... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7E2R3-40C_3 Product data sheet Conditions see Figure 5 vertical in free air −4 − Rev. 03 — 26 January 2009 BUK7E2R3-40C N-channel TrenchMOS standard level FET Min Typ Max - - 0. 003aab020 δ ...
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... °C; see Figure /dt = -100 A/µ Rev. 03 — 26 January 2009 BUK7E2R3-40C N-channel TrenchMOS standard level FET Min Typ Max 4 ...
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... I D (A) 300 200 100 (A) D Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Rev. 03 — 26 January 2009 BUK7E2R3-40C 003aab007 (V) = 5.5 6 100 200 300 I (A) D 003aab010 = 175 ° ° ...
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... Fig 11. Sub-threshold drain current as a function of gate-source voltage 003aab006 2 a 1 -60 V (V) GS Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 03 — 26 January 2009 BUK7E2R3-40C N-channel TrenchMOS standard level FET 03aa35 min typ max (V) GS 03aa27 0 60 120 ( ° © ...
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... Fig 15. Gate-source voltage as a function of gate charge; typical values 14000 C C iss (pF) 10500 C oss 7000 C rss 3500 0 −2 − Rev. 03 — 26 January 2009 BUK7E2R3-40C N-channel TrenchMOS standard level FET 003aab011 100 150 Q (nC) G 003aab009 (V) DS © ...
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... max 0.7 1.6 10.3 15.0 11 2.54 0.4 1.2 9.7 13.5 REFERENCES JEDEC JEITA low-profile 3-lead TO-220AB Rev. 03 — 26 January 2009 BUK7E2R3-40C N-channel TrenchMOS standard level FET base 3.30 2.6 2.79 2.2 EUROPEAN ISSUE DATE PROJECTION 05-06-23 06-02-14 © NXP B.V. 2009. All rights reserved. SOT226 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7E2R3-40C separated from data sheet BUK75_7E2R3-40C_2. BUK75_7E2R3-40C_2 20060810 BUK75_7E2R3-40C_1 20060503 ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 26 January 2009 BUK7E2R3-40C N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK7E2R3-40C_3 All rights reserved. Date of release: 26 January 2009 ...