BUK9615-100A NXP Semiconductors, BUK9615-100A Datasheet - Page 8

• Manufacturer Part Number: BUK9615-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9615-100A
Product data sheet
Fig 15. Input, output and reverse transfer capacitances
(nF)
C
20
15
10
5
0
10
as a function of drain-source voltage; typical
values
V
−2
GS
C
C
C
oss
rss
= 0 V; f = 1 MHz
iss
10
−1
1
10
All information provided in this document is subject to legal disclaimers.
V
003aaf376
DS
(V)
10
Rev. 3 — 19 April 2011
2
Fig 16. Gate-source voltage as a function of gate
V
(V)
GS
5
4
3
2
1
0
charge; typical values
T
0
j
= 25 °C; I
N-channel TrenchMOS logic level FET
20
V
D
DS
= 25 A
= 14 V
40
BUK9615-100A
60
V
DS
© NXP B.V. 2011. All rights reserved.
80
= 80 V
Q
003aaf377
G
(nC)
100
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