BSS192 NXP Semiconductors, BSS192 Datasheet - Page 4
![Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology](/photos/41/52/415269/sot089_3d_sml.gif)
BSS192
Manufacturer Part Number
BSS192
Description
Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS192,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Part Number:
BSS192E6327
Manufacturer:
INF
Quantity:
4 433
Company:
Part Number:
BSS192P
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
BSS192PL6327
Manufacturer:
MOTOROLA
Quantity:
6 124
Company:
Part Number:
BSS192Ј¬115
Manufacturer:
NXP
Quantity:
4 000
Philips Semiconductors
2002 May 22
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
1.2
0.8
0.4
0
0
10 V
0 V
Fig.2 Switching times test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB689
T amb ( C)
MLC697
200
4
handbook, halfpage
handbook, halfpage
V
(1) C
(2) C
(3) C
Fig.5
GS
INPUT
OUTPUT
(pF)
160
120
C
= 0; T
80
40
0
iss
oss
rss
0
.
.
.
Capacitance as a function of drain-source
voltage; typical values.
j
Fig.3 Input and output waveforms.
= 25 C; f = 1 MHz.
5
10 %
t on
90 %
10
(1)
(2)
(3)
90 %
15
Product specification
t off
20
V DS (V)
BSS192
MDA180
MBB690
10 %
25