BSS192 NXP Semiconductors, BSS192 Datasheet - Page 5
![Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology](/photos/41/52/415269/sot089_3d_sml.gif)
BSS192
Manufacturer Part Number
BSS192
Description
Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS192,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Part Number:
BSS192E6327
Manufacturer:
INF
Quantity:
4 433
Company:
Part Number:
BSS192P
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
BSS192PL6327
Manufacturer:
MOTOROLA
Quantity:
6 124
Company:
Part Number:
BSS192Ј¬115
Manufacturer:
NXP
Quantity:
4 000
Philips Semiconductors
2002 May 22
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
T
(1) V
(2) V
T
(1) V
(2) V
(3) V
Fig.8
j
j
= 25 C.
(mA)
= 25 C.
I D
(A)
10
10
I D
0 8
0 6
0 4
0 2
Fig.6 Output characteristics; typical values.
10
GS
GS
GS
GS
GS
1
0
3
2
0
8
= 10 V.
= 6 V.
= 10 V.
= 5 V.
= 4 V.
Drain current as a function of drain-source
on-state resistance; typical values.
12
5
(1)
16
(3) V
(4) V
(5) V
10
(1)
GS
GS
GS
= 5 V.
= 4 V.
= 3 V.
20
15
24
20
R DSon ( )
(2)
(3)
(4)
(5)
V DS (V)
(2)
(3)
MDA177
MDA179
28
25
5
handbook, halfpage
handbook, halfpage
V
V
Fig.9
k
DS
GSth
=
(A)
1.2
k
1.1
0.9
0.8
0.7
I D
0 8
0 6
0 4
0 2
= 10 V; T
Fig.7 Transfer characteristic; typical values.
------------------------------------- -
V
at I
1
1
0
GSth
V
50
0
GSth
D
Temperature coefficient of gate-source
threshold voltage; typical values.
= 1 mA.
at 25 C
at T
j
= 25 C.
j
2
0
4
50
6
Product specification
100
8
T j (
V GS (V)
BSS192
MDA182
MDA178
o
C)
150
10