NX3008PBKS NXP Semiconductors, NX3008PBKS Datasheet

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

NX3008PBKS

Manufacturer Part Number
NX3008PBKS
Description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NX3008PBKS,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
Table 1.
[1]
Symbol
V
I
Static characteristics (per transistor)
R
Per transistor
V
D
DS
GS
DSon
NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
Rev. 1 — 1 August 2011
Very fast switching
Low threshold voltage
Trench MOSFET technology
Relay driver
High-speed line driver
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
Quick reference data
2
.
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Conditions
T
V
T
V
I
D
j
amb
GS
GS
= 25 °C
= -200 mA; T
= -4.5 V;
= -4.5 V;
= 25 °C
ESD protection up to 2 kV
AEC-Q101 qualified
High-side loadswitch
Switching circuits
j
= 25 °C
[1]
Min
-
-8
-
-
Product data sheet
Typ
-
-
-
2.8
Max Unit
-30
8
-200 mA
4.1
V
V

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NX3008PBKS Summary of contents

Page 1

... NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET Rev. 1 — 1 August 2011 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  ...

Page 2

... V, 200 mA dual P-channel Trench MOSFET Simplified outline SOT363 (SC-88) Description plastic surface-mounted package; 6 leads Marking code LC% All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS Graphic symbol Version SOT363 [1] © NXP B.V. 2011. All rights reserved. G2 017aaa260 ...

Page 3

... °C; single pulse; t amb °C amb ° °C amb °C amb HBM All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS Min Max - - [1] - -200 [1] - -125 ≤ 10 µs - -0.8 p [2] - 280 ...

Page 4

... Product data sheet 001aao121 75 125 175 T (°C) j Fig drain mounting pad All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET 120 I der (%) -75 - Normalized continuous drain current as a function of junction temperature ...

Page 5

... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008PBKS Product data sheet 30 V, 200 mA dual P-channel Trench MOSFET Conditions in free air in free air − All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS Min Typ Max [ 300 [1] - 390 445 [2] ...

Page 6

... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008PBKS Product data sheet 30 V, 200 mA dual P-channel Trench MOSFET − All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS 017aaa035 (s) p © NXP B.V. 2011. All rights reserved ...

Page 7

... - -4 Ω °C G(ext -200 mA ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS Min Typ Max Unit - -0.6 -0.9 -1 µ -10 µA - -0.2 -1 µ ...

Page 8

... (V) DS Fig 7. 001aao258 R (4) (5) (6) -0.15 -0.20 -0.25 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET -3 - (A) (1) (2) -4 -10 -5 -10 -6 -10 0.0 -0.5 -1 ° (1) minimum values ...

Page 9

... Fig 11. Normalized drain-source on-state resistance as 001aao262 10 C (pF) 120 180 T (˚C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET - 120 a function of junction temperature; typical values 2 (1) 10 (2) (3) ...

Page 10

... Q (nC °C amb Fig 15. Gate charge waveform definitions -0. (A) -0.20 -0.15 (1) -0.10 -0.05 0.00 0.0 -0.4 -0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 001aao265 (2) -1 ...

Page 11

... NX3008PBKS Product data sheet 30 V, 200 mA dual P-channel Trench MOSFET duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS © NXP B.V. 2011. All rights reserved ...

Page 12

... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-88 All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION ...

Page 13

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot363_fr solder lands 2.5 solder resist occupied area Dimensions in mm ...

Page 14

... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date NX3008PBKS v.1 20110801 NX3008PBKS Product data sheet 30 V, 200 mA dual P-channel Trench MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 ...

Page 15

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS © NXP B.V. 2011. All rights reserved ...

Page 16

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 August 2011 NX3008PBKS © NXP B.V. 2011. All rights reserved ...

Page 17

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 August 2011 Document identifier: NX3008PBKS ...

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