PHB20NQ20T NXP Semiconductors, PHB20NQ20T Datasheet - Page 7

• Manufacturer Part Number: PHB20NQ20T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB20NQ20T
Product data sheet
Fig 12. Sub-threshold drain current as a function of
Fig 14. Gate-source voltage as a function of gate
(A)
I
D
V
(V)
10
10
10
10
10
10
GS
16
12
−1
−2
−3
−4
−5
−6
8
4
0
gate-source voltage
charge; typical values
T
T
0
0
j
j
= 25 °C; V
= 25 °C; I
10
minimum
1
D
DS
20
= 20 A
= V
2
GS
30
V
DD
typical
= 40 V
3
40
V
DD
maximum
All information provided in this document is subject to legal disclaimers.
4
= 160 V
50
003aaf106
V
003aaf108
Q
GS
G
(V)
(nC)
Rev. 02 — 16 December 2010
60
5
Fig 13. Input, output and reverse transfer capacitances
Fig 15. Source (diode forward) current as a function of
(pF)
(A)
I
C
F
10
10
10
10
32
24
16
8
0
4
3
2
10
as a function of drain-source voltage; typical
values
source-drain (diode forward) voltage; typical
values
V
V
0
−1
GS
GS
N-channel TrenchMOS standard level FET
= 0 V; f = 1 MHz
= 0 V
0.4
T
1
j
= 175 °C
PHB20NQ20T
0.8
10
T
V
V
© NXP B.V. 2010. All rights reserved.
j
SDS
C
DS
= 25 °C
C
C
oss
003aaf107
iss
rss
003aaf109
(V)
(V)
10
1.2
2
7 of 12