PHB33NQ20T NXP Semiconductors, PHB33NQ20T Datasheet - Page 7

• Manufacturer Part Number: PHB33NQ20T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB33NQ20T_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(m Ω )
DSon
V
(V)
125
100
GS
75
50
25
10
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
T
T
D
j
j
= 25 A
= 25 ° C
= 25 ° C
10
V
10
DS
= 40 V
V
20
20
GS
= 4.4 V
30
30
4.6 V
Q
100 V
160 V
03ao12
03ao16
I
G
D
(nC)
(A)
10 V
5 V
Rev. 02 — 3 February 2009
40
40
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
10
10
4
3
2
3
2
1
0
10
−60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-1
N-channel TrenchMOS standard level FET
0
1
PHB33NQ20T
60
10
120
© NXP B.V. 2009. All rights reserved.
V
DS
03ao15
T
j
C
C
C
(°C)
(V)
iss
oss
rss
03al52
10
180
2
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